TY - GEN
T1 - A Physics-based Numerical Model of Resistive Switching Behavior in Electrochemical Metallization Memristor
AU - Kim, Yeongkwon
AU - Jang, Byung Chul
N1 - Publisher Copyright:
© 2023 JSAP.
PY - 2023
Y1 - 2023
N2 - Electrochemical metallization (ECM)-based memristors enable energy-efficient in-memory computing, which is desirable for edge computing. However, a physics-based numerical model for ECM memristor is not well established. In this work, we developed the physics-based model for ECM memristor, which includes the effect of both Joule heating and electric field effects on ion migration to elucidate the dynamics of formation and dissolution of conductive filaments.
AB - Electrochemical metallization (ECM)-based memristors enable energy-efficient in-memory computing, which is desirable for edge computing. However, a physics-based numerical model for ECM memristor is not well established. In this work, we developed the physics-based model for ECM memristor, which includes the effect of both Joule heating and electric field effects on ion migration to elucidate the dynamics of formation and dissolution of conductive filaments.
UR - http://www.scopus.com/inward/record.url?scp=85167424811&partnerID=8YFLogxK
U2 - 10.23919/SNW57900.2023.10183941
DO - 10.23919/SNW57900.2023.10183941
M3 - Conference contribution
AN - SCOPUS:85167424811
T3 - 2023 Silicon Nanoelectronics Workshop, SNW 2023
SP - 63
EP - 64
BT - 2023 Silicon Nanoelectronics Workshop, SNW 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th Silicon Nanoelectronics Workshop, SNW 2023
Y2 - 11 June 2023 through 12 June 2023
ER -