A realistic adventure for the preparation of an ideal field emission device with quasi-zero tunneling barrier

Ki Rock Kwon; Jae Hoon Lee; Myoung Bok Lee; Sung Chan Bae; Sung Ho Hahm; Jung Hee Lee

A realistic adventure for the preparation of an ideal field emission device with quasi-zero tunneling barrier

Ki Rock Kwon, Jae Hoon Lee, Myoung Bok Lee, Sung Chan Bae, Sung Ho Hahm, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to conference › Paper › peer-review

Abstract

For the realistic implementation of an ideal emission device with quasi-zero tunneling barrier, a new and fundamental approach was conducted by inducing an intelligent thin layer on the cathode tip surface via a field-assisted self-aligning (FASA) process. As such, a carbon-related surface layer was uniformly incorporated onto the cathode-tip surface via the FASA process and speculated it to be a realistic way for the fundamental reduction of electron tunneling barrier.

Original language	English
Pages	19-20
Number of pages	2
State	Published - 2001
Event	Proceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States Duration: 12 Aug 2001 → 16 Aug 2001

Conference

Conference	Proceedings of the 14th International Vacuum Microelectronics Conference
Country/Territory	United States
City	Davis, CA
Period	12/08/01 → 16/08/01

Cite this

@conference{26db6586522b4898a76003efeb512a35,

title = "A realistic adventure for the preparation of an ideal field emission device with quasi-zero tunneling barrier",

abstract = "For the realistic implementation of an ideal emission device with quasi-zero tunneling barrier, a new and fundamental approach was conducted by inducing an intelligent thin layer on the cathode tip surface via a field-assisted self-aligning (FASA) process. As such, a carbon-related surface layer was uniformly incorporated onto the cathode-tip surface via the FASA process and speculated it to be a realistic way for the fundamental reduction of electron tunneling barrier.",

author = "Kwon, {Ki Rock} and Lee, {Jae Hoon} and Lee, {Myoung Bok} and Bae, {Sung Chan} and Hahm, {Sung Ho} and Lee, {Jung Hee}",

year = "2001",

language = "English",

pages = "19--20",

note = "Proceedings of the 14th International Vacuum Microelectronics Conference ; Conference date: 12-08-2001 Through 16-08-2001",

}

TY - CONF

T1 - A realistic adventure for the preparation of an ideal field emission device with quasi-zero tunneling barrier

AU - Kwon, Ki Rock

AU - Lee, Jae Hoon

AU - Lee, Myoung Bok

AU - Bae, Sung Chan

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

PY - 2001

Y1 - 2001

N2 - For the realistic implementation of an ideal emission device with quasi-zero tunneling barrier, a new and fundamental approach was conducted by inducing an intelligent thin layer on the cathode tip surface via a field-assisted self-aligning (FASA) process. As such, a carbon-related surface layer was uniformly incorporated onto the cathode-tip surface via the FASA process and speculated it to be a realistic way for the fundamental reduction of electron tunneling barrier.

AB - For the realistic implementation of an ideal emission device with quasi-zero tunneling barrier, a new and fundamental approach was conducted by inducing an intelligent thin layer on the cathode tip surface via a field-assisted self-aligning (FASA) process. As such, a carbon-related surface layer was uniformly incorporated onto the cathode-tip surface via the FASA process and speculated it to be a realistic way for the fundamental reduction of electron tunneling barrier.

UR - http://www.scopus.com/inward/record.url?scp=0035784871&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035784871

SP - 19

EP - 20

T2 - Proceedings of the 14th International Vacuum Microelectronics Conference

Y2 - 12 August 2001 through 16 August 2001

ER -

A realistic adventure for the preparation of an ideal field emission device with quasi-zero tunneling barrier

Abstract

Conference

Other files and links

Fingerprint

Cite this