Abstract
For the realistic implementation of an ideal emission device with quasi-zero tunneling barrier, a new and fundamental approach was conducted by inducing an intelligent thin layer on the cathode tip surface via a field-assisted self-aligning (FASA) process. As such, a carbon-related surface layer was uniformly incorporated onto the cathode-tip surface via the FASA process and speculated it to be a realistic way for the fundamental reduction of electron tunneling barrier.
| Original language | English |
|---|---|
| Pages | 19-20 |
| Number of pages | 2 |
| State | Published - 2001 |
| Event | Proceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States Duration: 12 Aug 2001 → 16 Aug 2001 |
Conference
| Conference | Proceedings of the 14th International Vacuum Microelectronics Conference |
|---|---|
| Country/Territory | United States |
| City | Davis, CA |
| Period | 12/08/01 → 16/08/01 |
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