A repeatable epitaxial lift-off process from a single GaAs substrate for low-cost and high-efficiency III-V solar cells

Wonjung Choi; Chang Zoo Kim; Chang Su Kim; Wooseok Heo; Taiha Joo; Seung Yoon Ryu; Hogyoung Kim; Hongjoon Kim; Ho Kwan Kang; Sungjin Jo

doi:10.1002/aenm.201400589

A repeatable epitaxial lift-off process from a single GaAs substrate for low-cost and high-efficiency III-V solar cells

Wonjung Choi, Chang Zoo Kim, Chang Su Kim, Wooseok Heo, Taiha Joo, Seung Yoon Ryu, Hogyoung Kim, Hongjoon Kim, Ho Kwan Kang, Sungjin Jo

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The effects of epitaxial materials and solar cell design on the performance of solar cells grown by the multilayer approach are investigated. The novel solar cell structure with a p-on-n type configuration suggested exhibits improved uniformity in the photovoltaic performance because of the suppression of Zn diffusion. This approach provides routes to achieve further improvements and acts as a guideline for the commercialization of the multilayer technique.

Original language	English
Journal	Advanced Energy Materials
Volume	4
Issue number	16
DOIs	https://doi.org/10.1002/aenm.201400589
State	Published - 1 Nov 2014

Keywords

compound semiconductors
epitaxial lift-off
GaAs
multilayer structures
solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/aenm.201400589

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title = "A repeatable epitaxial lift-off process from a single GaAs substrate for low-cost and high-efficiency III-V solar cells",

abstract = "The effects of epitaxial materials and solar cell design on the performance of solar cells grown by the multilayer approach are investigated. The novel solar cell structure with a p-on-n type configuration suggested exhibits improved uniformity in the photovoltaic performance because of the suppression of Zn diffusion. This approach provides routes to achieve further improvements and acts as a guideline for the commercialization of the multilayer technique.",

keywords = "compound semiconductors, epitaxial lift-off, GaAs, multilayer structures, solar cells",

author = "Wonjung Choi and Kim, {Chang Zoo} and Kim, {Chang Su} and Wooseok Heo and Taiha Joo and Ryu, {Seung Yoon} and Hogyoung Kim and Hongjoon Kim and Kang, {Ho Kwan} and Sungjin Jo",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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T1 - A repeatable epitaxial lift-off process from a single GaAs substrate for low-cost and high-efficiency III-V solar cells

AU - Choi, Wonjung

AU - Kim, Chang Zoo

AU - Kim, Chang Su

AU - Heo, Wooseok

AU - Joo, Taiha

AU - Ryu, Seung Yoon

AU - Kim, Hogyoung

AU - Kim, Hongjoon

AU - Kang, Ho Kwan

AU - Jo, Sungjin

PY - 2014/11/1

Y1 - 2014/11/1

N2 - The effects of epitaxial materials and solar cell design on the performance of solar cells grown by the multilayer approach are investigated. The novel solar cell structure with a p-on-n type configuration suggested exhibits improved uniformity in the photovoltaic performance because of the suppression of Zn diffusion. This approach provides routes to achieve further improvements and acts as a guideline for the commercialization of the multilayer technique.

AB - The effects of epitaxial materials and solar cell design on the performance of solar cells grown by the multilayer approach are investigated. The novel solar cell structure with a p-on-n type configuration suggested exhibits improved uniformity in the photovoltaic performance because of the suppression of Zn diffusion. This approach provides routes to achieve further improvements and acts as a guideline for the commercialization of the multilayer technique.

KW - compound semiconductors

KW - epitaxial lift-off

KW - GaAs

KW - multilayer structures

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=84911126958&partnerID=8YFLogxK

U2 - 10.1002/aenm.201400589

DO - 10.1002/aenm.201400589

M3 - Article

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SN - 1614-6832

VL - 4

JO - Advanced Energy Materials

JF - Advanced Energy Materials

IS - 16

ER -

A repeatable epitaxial lift-off process from a single GaAs substrate for low-cost and high-efficiency III-V solar cells

Abstract

Keywords

UN SDGs

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