A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors

Jieun Ko; Su Jeong Lee; Kyongjun Kim; Eung Kyu Lee; Keon Hee Lim; Jae Min Myoung; Jeeyoung Yoo; Youn Sang Kim

doi:10.1039/c5tc00067j

A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors

Jieun Ko, Su Jeong Lee, Kyongjun Kim, Eung Kyu Lee, Keon Hee Lim, Jae Min Myoung, Jeeyoung Yoo, Youn Sang Kim

School of Energy Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Herein, we propose an ionic liquid-polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid-PVP (IL-PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 °C. Furthermore, the IL-PVP dielectric layer showed a high capacitance value of ∼2 μF cm^-2 and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of ∼3.3 cm² V^-1 s^-1 at a gate bias of 3 V.

Original language	English
Pages (from-to)	4239-4243
Number of pages	5
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	17
DOIs	https://doi.org/10.1039/c5tc00067j
State	Published - 7 May 2015

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title = "A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors",

abstract = "Herein, we propose an ionic liquid-polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid-PVP (IL-PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 °C. Furthermore, the IL-PVP dielectric layer showed a high capacitance value of ∼2 μF cm-2 and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of ∼3.3 cm2 V-1 s-1 at a gate bias of 3 V.",

author = "Jieun Ko and Lee, \{Su Jeong\} and Kyongjun Kim and Lee, \{Eung Kyu\} and Lim, \{Keon Hee\} and Myoung, \{Jae Min\} and Jeeyoung Yoo and Kim, \{Youn Sang\}",

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doi = "10.1039/c5tc00067j",

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T1 - A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors

AU - Ko, Jieun

AU - Lee, Su Jeong

AU - Kim, Kyongjun

AU - Lee, Eung Kyu

AU - Lim, Keon Hee

AU - Myoung, Jae Min

AU - Yoo, Jeeyoung

AU - Kim, Youn Sang

PY - 2015/5/7

Y1 - 2015/5/7

N2 - Herein, we propose an ionic liquid-polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid-PVP (IL-PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 °C. Furthermore, the IL-PVP dielectric layer showed a high capacitance value of ∼2 μF cm-2 and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of ∼3.3 cm2 V-1 s-1 at a gate bias of 3 V.

AB - Herein, we propose an ionic liquid-polymer dielectric layer for flexible electronics reinforced by a chemical interaction between the polymer matrix (PVP) and the ionic liquid. Due to the robust structures of the cross-linked PVP matrix and hydrogen bonding between the ionic liquid and PVP, the ionic liquid-PVP (IL-PVP) layer exhibited a good mechanical strength when bending up to 1000 times and a stable thermal behaviour up to 300 °C. Furthermore, the IL-PVP dielectric layer showed a high capacitance value of ∼2 μF cm-2 and was operated well as a gate insulator for flexible ZnO thin film transistors with a linear field-effect mobility of ∼3.3 cm2 V-1 s-1 at a gate bias of 3 V.

UR - https://www.scopus.com/pages/publications/84928525892

U2 - 10.1039/c5tc00067j

DO - 10.1039/c5tc00067j

M3 - Article

AN - SCOPUS:84928525892

SN - 2050-7526

VL - 3

SP - 4239

EP - 4243

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 17

ER -

A robust ionic liquid-polymer gate insulator for high-performance flexible thin film transistors

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