A Steady-State LDMOST Model Based on Semi-Numerical Regional Approach

Yeonbae Chung; Taehoon Kim

doi:10.46338/ijetae0922_10

A Steady-State LDMOST Model Based on Semi-Numerical Regional Approach

Yeonbae Chung
, Taehoon Kim

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents a high-voltage lateral DMOS transistor (LDMOST) model for steady-state condition.The device modelling method is basically based on a semi-numerical regional approach.The complete model is physical, so that it accounts for unique LDMOST features such as non-uniform channel doping, non-planar drift region and space-charge-limited current flowing.Themodelcalculationsshow good overall agreement withthe measured results.This DMOS transistor model, whichcan beapplicable to a SPICE-like circuit simulator, might be useful in technology CAD of high-voltage power ICs.

Original language	English
Pages (from-to)	94-101
Number of pages	8
Journal	International Journal of Emerging Technology and Advanced Engineering
Volume	12
Issue number	9
DOIs	https://doi.org/10.46338/ijetae0922_10
State	Published - 1 Sep 2022

Keywords

DMOS transistor
high-voltage
power MOSFET
semiconductor device model
steady-state

Access to Document

10.46338/ijetae0922_10

Cite this

@article{c4e66d7aab6b4dceb32497bb56442e24,

title = "A Steady-State LDMOST Model Based on Semi-Numerical Regional Approach",

abstract = "This paper presents a high-voltage lateral DMOS transistor (LDMOST) model for steady-state condition.The device modelling method is basically based on a semi-numerical regional approach.The complete model is physical, so that it accounts for unique LDMOST features such as non-uniform channel doping, non-planar drift region and space-charge-limited current flowing.Themodelcalculationsshow good overall agreement withthe measured results.This DMOS transistor model, whichcan beapplicable to a SPICE-like circuit simulator, might be useful in technology CAD of high-voltage power ICs.",

keywords = "DMOS transistor, high-voltage, power MOSFET, semiconductor device model, steady-state",

author = "Yeonbae Chung and Taehoon Kim",

year = "2022",

month = sep,

day = "1",

doi = "10.46338/ijetae0922\_10",

language = "English",

volume = "12",

pages = "94--101",

journal = "International Journal of Emerging Technology and Advanced Engineering",

issn = "2250-2459",

publisher = "IJETAE Publication House",

number = "9",

}

TY - JOUR

T1 - A Steady-State LDMOST Model Based on Semi-Numerical Regional Approach

AU - Chung, Yeonbae

AU - Kim, Taehoon

PY - 2022/9/1

Y1 - 2022/9/1

N2 - This paper presents a high-voltage lateral DMOS transistor (LDMOST) model for steady-state condition.The device modelling method is basically based on a semi-numerical regional approach.The complete model is physical, so that it accounts for unique LDMOST features such as non-uniform channel doping, non-planar drift region and space-charge-limited current flowing.Themodelcalculationsshow good overall agreement withthe measured results.This DMOS transistor model, whichcan beapplicable to a SPICE-like circuit simulator, might be useful in technology CAD of high-voltage power ICs.

AB - This paper presents a high-voltage lateral DMOS transistor (LDMOST) model for steady-state condition.The device modelling method is basically based on a semi-numerical regional approach.The complete model is physical, so that it accounts for unique LDMOST features such as non-uniform channel doping, non-planar drift region and space-charge-limited current flowing.Themodelcalculationsshow good overall agreement withthe measured results.This DMOS transistor model, whichcan beapplicable to a SPICE-like circuit simulator, might be useful in technology CAD of high-voltage power ICs.

KW - DMOS transistor

KW - high-voltage

KW - power MOSFET

KW - semiconductor device model

KW - steady-state

UR - https://www.scopus.com/pages/publications/85141128136

U2 - 10.46338/ijetae0922_10

DO - 10.46338/ijetae0922_10

M3 - Article

AN - SCOPUS:85141128136

SN - 2250-2459

VL - 12

SP - 94

EP - 101

JO - International Journal of Emerging Technology and Advanced Engineering

JF - International Journal of Emerging Technology and Advanced Engineering

IS - 9

ER -

A Steady-State LDMOST Model Based on Semi-Numerical Regional Approach

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this