Abstract
In this study, semiconductor switches are analyzed, compared, and selected for solid-state pulsed power modulators with a high repetitive fast rise time. Characteristics of discharge switches are critical in the design of pulsed power modulators with a fast rise time of several tens of nanoseconds. Five types of switches, including insulated gate bipolar transistor (IGBT) and silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET), were analyzed to select a discharge switch in addition to a comparison considering their rise time, arc reliability, and cost. A test circuit was designed and used to compare the rise time of semiconductor switches. Finally, a 1200-V/40-A IGBT was selected as the best performing discharge switch. The rise time and cost of the selected IGBT were up to 30% slower than and 1/6 those of the comparison SiC-MOSFET, respectively. The selected IGBT was employed in a high-voltage pulsed power modulator with specifications of 10 kV, 80 A, a maximum repetition rate of 50 kHz, and a minimum pulsewidth of 100 ns. The modulator exhibited a rise time of 18 ns or less and an operating repetition rate of 50 kHz. Finally, the fast rise time of the selected switch and its arc reliability was verified.
| Original language | English |
|---|---|
| Pages (from-to) | 3022-3028 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Plasma Science |
| Volume | 50 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1 Sep 2022 |
Keywords
- Marx generators
- power semiconductor switches
- pulse generation
- pulse power system switches
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