A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED

Ju Young Lee; Jong Hoon Lee; Hong Seung Kim; Chung Hyun Lee; Hyung Soo Ahn; Hyung Koun Cho; Young Yi Kim; Bo Hyun Kong; Ho Seong Lee

doi:10.1016/j.tsf.2009.03.028

A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED

Ju Young Lee, Jong Hoon Lee, Hong Seung Kim, Chung Hyun Lee, Hyung Soo Ahn, Hyung Koun Cho, Young Yi Kim, Bo Hyun Kong, Ho Seong Lee

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

We report the effects of thermal annealing in air and N₂ ambient on the structural, optical, and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we report on the fabrication and device characterization of heterojunction light-emitting diodes based on the n-ZnO/p-GaN systems. In the case of N₂ ambient, room-temperature electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to 700 nm due to the Ga-O mixed region formed interface between the ZnO and GaN layer.

Original language	English
Pages (from-to)	5157-5160
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2009.03.028
State	Published - 1 Jul 2009

Keywords

EL
Heterostructure
I-V
Light-emitting diode
Thermal annealing
ZnO

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10.1016/j.tsf.2009.03.028

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title = "A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED",

abstract = "We report the effects of thermal annealing in air and N2 ambient on the structural, optical, and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we report on the fabrication and device characterization of heterojunction light-emitting diodes based on the n-ZnO/p-GaN systems. In the case of N2 ambient, room-temperature electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to 700 nm due to the Ga-O mixed region formed interface between the ZnO and GaN layer.",

keywords = "EL, Heterostructure, I-V, Light-emitting diode, Thermal annealing, ZnO",

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AU - Lee, Ju Young

AU - Lee, Jong Hoon

AU - Seung Kim, Hong

AU - Lee, Chung Hyun

AU - Ahn, Hyung Soo

AU - Cho, Hyung Koun

AU - Kim, Young Yi

AU - Kong, Bo Hyun

AU - Lee, Ho Seong

PY - 2009/7/1

Y1 - 2009/7/1

N2 - We report the effects of thermal annealing in air and N2 ambient on the structural, optical, and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we report on the fabrication and device characterization of heterojunction light-emitting diodes based on the n-ZnO/p-GaN systems. In the case of N2 ambient, room-temperature electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to 700 nm due to the Ga-O mixed region formed interface between the ZnO and GaN layer.

AB - We report the effects of thermal annealing in air and N2 ambient on the structural, optical, and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we report on the fabrication and device characterization of heterojunction light-emitting diodes based on the n-ZnO/p-GaN systems. In the case of N2 ambient, room-temperature electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to 700 nm due to the Ga-O mixed region formed interface between the ZnO and GaN layer.

KW - EL

KW - Heterostructure

KW - I-V

KW - Light-emitting diode

KW - Thermal annealing

KW - ZnO

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A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED

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Keywords

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