A third-order ΣΔ modulator in 0.18μm CMOS with calibrated mixed-mode integrators

Jae Hoon Shim; Beomsup Kim

A third-order ΣΔ modulator in 0.18μm CMOS with calibrated mixed-mode integrators

Jae Hoon Shim, Beomsup Kim

School of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

A third-order ΣΔ modulator employing mixed-mode integrators has been designed and implemented in 0.18um CMOS process. Because the use of mixed-mode integrators allows a 12dB improvement in the dynamic range over conventional third-order architectures, the modulator can be driven with lower sampling frequency to achieve the same dynamic range. The modulator covers the dynamic range requirements of GSM and WCDMA applications with sampling frequencies of only 3.2MHz and 40MHz, respectively. The circuit occupies 0.7mm² silicon area.

Original language	English
Pages	78-81
Number of pages	4
State	Published - 2004
Event	2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI - Honolulu, HI, United States Duration: 17 Jun 2004 → 19 Jun 2004

Conference

Conference	2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI
Country/Territory	United States
City	Honolulu, HI
Period	17/06/04 → 19/06/04

Keywords

ΣΔ modulator
GSM
Mixed-mode integrator
WCDMA

Cite this

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title = "A third-order ΣΔ modulator in 0.18μm CMOS with calibrated mixed-mode integrators",

abstract = "A third-order ΣΔ modulator employing mixed-mode integrators has been designed and implemented in 0.18um CMOS process. Because the use of mixed-mode integrators allows a 12dB improvement in the dynamic range over conventional third-order architectures, the modulator can be driven with lower sampling frequency to achieve the same dynamic range. The modulator covers the dynamic range requirements of GSM and WCDMA applications with sampling frequencies of only 3.2MHz and 40MHz, respectively. The circuit occupies 0.7mm2 silicon area.",

keywords = "ΣΔ modulator, GSM, Mixed-mode integrator, WCDMA",

author = "Shim, {Jae Hoon} and Beomsup Kim",

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note = "2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI ; Conference date: 17-06-2004 Through 19-06-2004",

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AU - Shim, Jae Hoon

AU - Kim, Beomsup

PY - 2004

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N2 - A third-order ΣΔ modulator employing mixed-mode integrators has been designed and implemented in 0.18um CMOS process. Because the use of mixed-mode integrators allows a 12dB improvement in the dynamic range over conventional third-order architectures, the modulator can be driven with lower sampling frequency to achieve the same dynamic range. The modulator covers the dynamic range requirements of GSM and WCDMA applications with sampling frequencies of only 3.2MHz and 40MHz, respectively. The circuit occupies 0.7mm2 silicon area.

AB - A third-order ΣΔ modulator employing mixed-mode integrators has been designed and implemented in 0.18um CMOS process. Because the use of mixed-mode integrators allows a 12dB improvement in the dynamic range over conventional third-order architectures, the modulator can be driven with lower sampling frequency to achieve the same dynamic range. The modulator covers the dynamic range requirements of GSM and WCDMA applications with sampling frequencies of only 3.2MHz and 40MHz, respectively. The circuit occupies 0.7mm2 silicon area.

KW - ΣΔ modulator

KW - GSM

KW - Mixed-mode integrator

KW - WCDMA

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M3 - Paper

AN - SCOPUS:4544384316

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T2 - 2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI

Y2 - 17 June 2004 through 19 June 2004

ER -

A third-order ΣΔ modulator in 0.18μm CMOS with calibrated mixed-mode integrators

Abstract

Conference

Keywords

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