A tunable band gap of the layered semiconductor Zn3In2S6under pressure
- Resta A. Susilo
- , Yu Liu
- , Hongwei Sheng
- , Hongliang Dong
- , Raimundas Sereika
- , Bongjae Kim
- , Zhixiang Hu
- , Shujia Li
- , Mingzhi Yuan
- , Cedomir Petrovic
- , Bin Chen
- Center for High Pressure Science & Technology Advanced Research
- Brookhaven National Laboratory
- Vytautas Magnus University
Research output: Contribution to journal › Article › peer-review
13
Scopus
citations