A two-step-recess process based on atomic-layer etching for high-performance In0.52Al0.48As/In0.53 Ga0.47As p-HEMTs

Tae Woo Kim; Dae Hyun Kim; Sang Duk Park; Seung Heon Shin; Seong June Jo; Ho Jin Song; Young Min Park; Jeoun Oun Bae; Young Woon Kim; Geun Young Yeom; Jae Hyung Jang; Jong In Song

doi:10.1109/TED.2008.923522

A two-step-recess process based on atomic-layer etching for high-performance In_0.52Al_0.48As/In_0.53 Ga_0.47As p-HEMTs

Tae Woo Kim, Dae Hyun Kim, Sang Duk Park, Seung Heon Shin, Seong June Jo, Ho Jin Song, Young Min Park, Jeoun Oun Bae, Young Woon Kim, Geun Young Yeom, Jae Hyung Jang, Jong In Song

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We investigated 60-nm In_0.52Al_0.48 As/In_0.53Ga_0.47As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 Åcycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In_0.52 Al_0.48As barrier layer, and an rms surface-roughness value of 1.37 Å for the exposed In_0.52Al_0.48As barrier after removing the InP etch stop layer. The application of the ALET technology for the gate recess of 60-nm In_0.52 Al_0.48As/In_0.53Ga_0.47As p-HEMTs produced improved device parameters, including transconductance (G_M), cutoff frequencies (f_T), and electron saturation velocity (v_sat) in the channel layer, which is mainly due to the high etch selectivity and low plasma-induced damage to the gate area. The 60-nm In_0.52Al_0.48 As/In_0.53Ga_0.47As p-HEMTs fabricated by using the ALET technology exhibited G_M,Max = 1.17 S/mm, f_T = 398 GHz, and v_sat = 2.5 × 10⁷ cm/s.

Original language	English
Pages (from-to)	1577-1584
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	7
DOIs	https://doi.org/10.1109/TED.2008.923522
State	Published - Jul 2008

Keywords

Atomic-layer etching (ALET)
Channel electron saturation velocity (v)
Gate-recess process
Pseudomorphic high-electron mobility transistor (p-HEMT)

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10.1109/TED.2008.923522

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Kim, T. W., Kim, D. H., Park, S. D., Shin, S. H., Jo, S. J., Song, H. J., Park, Y. M., Bae, J. O., Kim, Y. W., Yeom, G. Y., Jang, J. H., & Song, J. I. (2008). A two-step-recess process based on atomic-layer etching for high-performance In_0.52Al_0.48As/In_0.53 Ga_0.47As p-HEMTs. IEEE Transactions on Electron Devices, 55(7), 1577-1584. https://doi.org/10.1109/TED.2008.923522

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title = "A two-step-recess process based on atomic-layer etching for high-performance In0.52Al0.48As/In0.53 Ga0.47As p-HEMTs",

abstract = "We investigated 60-nm In0.52Al0.48 As/In0.53Ga0.47As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 {\AA}cycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In0.52 Al0.48As barrier layer, and an rms surface-roughness value of 1.37 {\AA} for the exposed In0.52Al0.48As barrier after removing the InP etch stop layer. The application of the ALET technology for the gate recess of 60-nm In0.52 Al0.48As/In0.53Ga0.47As p-HEMTs produced improved device parameters, including transconductance (GM), cutoff frequencies (fT), and electron saturation velocity (vsat) in the channel layer, which is mainly due to the high etch selectivity and low plasma-induced damage to the gate area. The 60-nm In0.52Al0.48 As/In0.53Ga0.47As p-HEMTs fabricated by using the ALET technology exhibited GM,Max = 1.17 S/mm, fT = 398 GHz, and vsat = 2.5 × 107 cm/s.",

keywords = "Atomic-layer etching (ALET), Channel electron saturation velocity (v), Gate-recess process, Pseudomorphic high-electron mobility transistor (p-HEMT)",

author = "Kim, {Tae Woo} and Kim, {Dae Hyun} and Park, {Sang Duk} and Shin, {Seung Heon} and Jo, {Seong June} and Song, {Ho Jin} and Park, {Young Min} and Bae, {Jeoun Oun} and Kim, {Young Woon} and Yeom, {Geun Young} and Jang, {Jae Hyung} and Song, {Jong In}",

year = "2008",

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doi = "10.1109/TED.2008.923522",

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T1 - A two-step-recess process based on atomic-layer etching for high-performance In0.52Al0.48As/In0.53 Ga0.47As p-HEMTs

AU - Kim, Tae Woo

AU - Kim, Dae Hyun

AU - Park, Sang Duk

AU - Shin, Seung Heon

AU - Jo, Seong June

AU - Song, Ho Jin

AU - Park, Young Min

AU - Bae, Jeoun Oun

AU - Kim, Young Woon

AU - Yeom, Geun Young

AU - Jang, Jae Hyung

AU - Song, Jong In

PY - 2008/7

Y1 - 2008/7

N2 - We investigated 60-nm In0.52Al0.48 As/In0.53Ga0.47As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 Åcycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In0.52 Al0.48As barrier layer, and an rms surface-roughness value of 1.37 Å for the exposed In0.52Al0.48As barrier after removing the InP etch stop layer. The application of the ALET technology for the gate recess of 60-nm In0.52 Al0.48As/In0.53Ga0.47As p-HEMTs produced improved device parameters, including transconductance (GM), cutoff frequencies (fT), and electron saturation velocity (vsat) in the channel layer, which is mainly due to the high etch selectivity and low plasma-induced damage to the gate area. The 60-nm In0.52Al0.48 As/In0.53Ga0.47As p-HEMTs fabricated by using the ALET technology exhibited GM,Max = 1.17 S/mm, fT = 398 GHz, and vsat = 2.5 × 107 cm/s.

AB - We investigated 60-nm In0.52Al0.48 As/In0.53Ga0.47As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 Åcycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In0.52 Al0.48As barrier layer, and an rms surface-roughness value of 1.37 Å for the exposed In0.52Al0.48As barrier after removing the InP etch stop layer. The application of the ALET technology for the gate recess of 60-nm In0.52 Al0.48As/In0.53Ga0.47As p-HEMTs produced improved device parameters, including transconductance (GM), cutoff frequencies (fT), and electron saturation velocity (vsat) in the channel layer, which is mainly due to the high etch selectivity and low plasma-induced damage to the gate area. The 60-nm In0.52Al0.48 As/In0.53Ga0.47As p-HEMTs fabricated by using the ALET technology exhibited GM,Max = 1.17 S/mm, fT = 398 GHz, and vsat = 2.5 × 107 cm/s.

KW - Atomic-layer etching (ALET)

KW - Channel electron saturation velocity (v)

KW - Gate-recess process

KW - Pseudomorphic high-electron mobility transistor (p-HEMT)

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U2 - 10.1109/TED.2008.923522

DO - 10.1109/TED.2008.923522

M3 - Article

AN - SCOPUS:46649103444

SN - 0018-9383

VL - 55

SP - 1577

EP - 1584

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

A two-step-recess process based on atomic-layer etching for high-performance In_0.52Al_0.48As/In_0.53 Ga_0.47As p-HEMTs

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Keywords

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