A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament

Sangheon Lee; Daeseok Lee; Jiyong Woo; Euijun Cha; Hyunsang Hwang

doi:10.1109/ESSDERC.2013.6818848

A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament

Sangheon Lee
, Daeseok Lee
, Jiyong Woo
, Euijun Cha
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

For the first time, we demonstrate filament controllability by a two-step set operation based on triple-layer ReRAM. Hence, we report a highly reliable memory switching of a triple-layer structure based on resistive switching memory devices by inserting an additional binary metal oxide layer. The inserted oxide layer in the triple-layer can act as a filament controlling factor with the two-step set operation for reliable resistive switching. Compared with the bi-layer structure, the three layers of the two-step set operation showed excellent uniform V_set, V_reset, high-resistance state (R_HRS), and low-resistance state (R_LRS). Furthermore, the devices exhibited excellent memory performance such as endurance, resistance on/off ratio, and reliable data retention of up to 10⁴ s at 180°C.

Original language	English
Title of host publication	ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	178-181
Number of pages	4
ISBN (Print)	9781479906499
DOIs	https://doi.org/10.1109/ESSDERC.2013.6818848
State	Published - 2013
Event	43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania Duration: 16 Sep 2013 → 20 Sep 2013

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	43rd European Solid-State Device Research Conference, ESSDERC 2013
Country/Territory	Romania
City	Bucharest
Period	16/09/13 → 20/09/13

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10.1109/ESSDERC.2013.6818848

Cite this

Lee, S., Lee, D., Woo, J., Cha, E., & Hwang, H. (2013). A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament. In ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference (pp. 178-181). Article 6818848 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2013.6818848

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title = "A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament",

abstract = "For the first time, we demonstrate filament controllability by a two-step set operation based on triple-layer ReRAM. Hence, we report a highly reliable memory switching of a triple-layer structure based on resistive switching memory devices by inserting an additional binary metal oxide layer. The inserted oxide layer in the triple-layer can act as a filament controlling factor with the two-step set operation for reliable resistive switching. Compared with the bi-layer structure, the three layers of the two-step set operation showed excellent uniform Vset, Vreset, high-resistance state (RHRS), and low-resistance state (RLRS). Furthermore, the devices exhibited excellent memory performance such as endurance, resistance on/off ratio, and reliable data retention of up to 104 s at 180°C.",

author = "Sangheon Lee and Daeseok Lee and Jiyong Woo and Euijun Cha and Hyunsang Hwang",

year = "2013",

doi = "10.1109/ESSDERC.2013.6818848",

language = "English",

isbn = "9781479906499",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "178--181",

booktitle = "ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference",

address = "United States",

note = "43rd European Solid-State Device Research Conference, ESSDERC 2013 ; Conference date: 16-09-2013 Through 20-09-2013",

}

Lee, S, Lee, D, Woo, J, Cha, E & Hwang, H 2013, A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament. in ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference., 6818848, European Solid-State Device Research Conference, IEEE Computer Society, pp. 178-181, 43rd European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, 16/09/13. https://doi.org/10.1109/ESSDERC.2013.6818848

A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament. / Lee, Sangheon; Lee, Daeseok; Woo, Jiyong et al.
ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, 2013. p. 178-181 6818848 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament

AU - Lee, Sangheon

AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Cha, Euijun

AU - Hwang, Hyunsang

PY - 2013

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N2 - For the first time, we demonstrate filament controllability by a two-step set operation based on triple-layer ReRAM. Hence, we report a highly reliable memory switching of a triple-layer structure based on resistive switching memory devices by inserting an additional binary metal oxide layer. The inserted oxide layer in the triple-layer can act as a filament controlling factor with the two-step set operation for reliable resistive switching. Compared with the bi-layer structure, the three layers of the two-step set operation showed excellent uniform Vset, Vreset, high-resistance state (RHRS), and low-resistance state (RLRS). Furthermore, the devices exhibited excellent memory performance such as endurance, resistance on/off ratio, and reliable data retention of up to 104 s at 180°C.

AB - For the first time, we demonstrate filament controllability by a two-step set operation based on triple-layer ReRAM. Hence, we report a highly reliable memory switching of a triple-layer structure based on resistive switching memory devices by inserting an additional binary metal oxide layer. The inserted oxide layer in the triple-layer can act as a filament controlling factor with the two-step set operation for reliable resistive switching. Compared with the bi-layer structure, the three layers of the two-step set operation showed excellent uniform Vset, Vreset, high-resistance state (RHRS), and low-resistance state (RLRS). Furthermore, the devices exhibited excellent memory performance such as endurance, resistance on/off ratio, and reliable data retention of up to 104 s at 180°C.

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DO - 10.1109/ESSDERC.2013.6818848

M3 - Conference contribution

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T3 - European Solid-State Device Research Conference

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BT - ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference

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Y2 - 16 September 2013 through 20 September 2013

ER -

A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament

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