A unified method to extract the effective mobility in InGaAs metal-insulator-semiconductor field-effect-transistors using scattering-parameters

In this letter, we propose a unified method to extract the effective mobility (μ_eff) of In_0.52Al_0.48As/In_0.7Ga_0.3As/In_0.52Al_0.48As single-quantum-well (SQW) metal-insulator-semiconductor field-effect-transistors (MISFETs). The proposed method relies only on the measured high-frequency scattering-parameters (S-parameters) of the MISFETs in the linear regime. Two key metrics of MOS devices, intrinsic output conductance (g_{o_i}) and intrinsic gate capacitance (C_{g_i}), were extracted directly from the measured S-parameters using two-port network parameter theories, allowing us to compute the effective mobility of the MOS devices. Since the method only requires the small-signal S-parameter measurement data, it would be applicable to any kind of FETs and could be fruitful for studying the dependence of the effective mobility on lateral electric field intensity.