Acceleration of NO2 gas sensitivity in two-dimensional SnSe2 by Br doping

Myung Sik Choi; Geukchan Bang; Jeongmin Lee; Inseo Kim; Joonho Bang; Seung Yong Lee; Kimoon Lee; Kyu Hyoung Lee

doi:10.1039/d2dt03784j

Acceleration of NO₂ gas sensitivity in two-dimensional SnSe₂ by Br doping

Myung Sik Choi, Geukchan Bang, Jeongmin Lee, Inseo Kim, Joonho Bang, Seung Yong Lee, Kimoon Lee, Kyu Hyoung Lee

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The authors report a Br doping effect on the NO₂ gas sensing properties of a two-dimensional (2D) SnSe₂ semiconductor. Single crystalline 2D SnSe₂ samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe₂ serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO₂ gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively.

Original language	English
Pages (from-to)	3386-3390
Number of pages	5
Journal	Dalton Transactions
Volume	52
Issue number	11
DOIs	https://doi.org/10.1039/d2dt03784j
State	Published - 13 Feb 2023

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@article{3706dadd40304075b34c34bff85736c2,

title = "Acceleration of NO2 gas sensitivity in two-dimensional SnSe2 by Br doping",

abstract = "The authors report a Br doping effect on the NO2 gas sensing properties of a two-dimensional (2D) SnSe2 semiconductor. Single crystalline 2D SnSe2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively.",

author = "Choi, {Myung Sik} and Geukchan Bang and Jeongmin Lee and Inseo Kim and Joonho Bang and Lee, {Seung Yong} and Kimoon Lee and Lee, {Kyu Hyoung}",

note = "Publisher Copyright: {\textcopyright} 2023 The Royal Society of Chemistry",

year = "2023",

month = feb,

day = "13",

doi = "10.1039/d2dt03784j",

language = "English",

volume = "52",

pages = "3386--3390",

journal = "Dalton Transactions",

issn = "1477-9226",

publisher = "Royal Society of Chemistry",

number = "11",

}

TY - JOUR

T1 - Acceleration of NO2 gas sensitivity in two-dimensional SnSe2 by Br doping

AU - Choi, Myung Sik

AU - Bang, Geukchan

AU - Lee, Jeongmin

AU - Kim, Inseo

AU - Bang, Joonho

AU - Lee, Seung Yong

AU - Lee, Kimoon

AU - Lee, Kyu Hyoung

PY - 2023/2/13

Y1 - 2023/2/13

N2 - The authors report a Br doping effect on the NO2 gas sensing properties of a two-dimensional (2D) SnSe2 semiconductor. Single crystalline 2D SnSe2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively.

AB - The authors report a Br doping effect on the NO2 gas sensing properties of a two-dimensional (2D) SnSe2 semiconductor. Single crystalline 2D SnSe2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85150226030&partnerID=8YFLogxK

U2 - 10.1039/d2dt03784j

DO - 10.1039/d2dt03784j

M3 - Article

C2 - 36811336

AN - SCOPUS:85150226030

SN - 1477-9226

VL - 52

SP - 3386

EP - 3390

JO - Dalton Transactions

JF - Dalton Transactions

IS - 11

ER -

Acceleration of NO₂ gas sensitivity in two-dimensional SnSe₂ by Br doping

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