Acceleration of NO2 gas sensitivity in two-dimensional SnSe2 by Br doping

Myung Sik Choi; Geukchan Bang; Jeongmin Lee; Inseo Kim; Joonho Bang; Seung Yong Lee; Kimoon Lee; Kyu Hyoung Lee

doi:10.1039/d2dt03784j

Acceleration of NO₂ gas sensitivity in two-dimensional SnSe₂ by Br doping

Myung Sik Choi
, Geukchan Bang
, Jeongmin Lee
, Inseo Kim
, Joonho Bang
, Seung Yong Lee
, Kimoon Lee
, Kyu Hyoung Lee

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The authors report a Br doping effect on the NO₂ gas sensing properties of a two-dimensional (2D) SnSe₂ semiconductor. Single crystalline 2D SnSe₂ samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe₂ serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO₂ gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively.

Original language	English
Pages (from-to)	3386-3390
Number of pages	5
Journal	Dalton Transactions
Volume	52
Issue number	11
DOIs	https://doi.org/10.1039/d2dt03784j
State	Published - 13 Feb 2023

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title = "Acceleration of NO2 gas sensitivity in two-dimensional SnSe2 by Br doping",

abstract = "The authors report a Br doping effect on the NO2 gas sensing properties of a two-dimensional (2D) SnSe2 semiconductor. Single crystalline 2D SnSe2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02\% and 23 s to 3.38\% and 15 s, respectively.",

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AU - Choi, Myung Sik

AU - Bang, Geukchan

AU - Lee, Jeongmin

AU - Kim, Inseo

AU - Bang, Joonho

AU - Lee, Seung Yong

AU - Lee, Kimoon

AU - Lee, Kyu Hyoung

PY - 2023/2/13

Y1 - 2023/2/13

N2 - The authors report a Br doping effect on the NO2 gas sensing properties of a two-dimensional (2D) SnSe2 semiconductor. Single crystalline 2D SnSe2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively.

AB - The authors report a Br doping effect on the NO2 gas sensing properties of a two-dimensional (2D) SnSe2 semiconductor. Single crystalline 2D SnSe2 samples with different Br contents are grown by a simple melt-solidification method. By analyzing the structural, vibrational as well as electrical properties, it can be confirmed that the Br impurity substitutes on the Se-site in SnSe2 serving as an efficient electron donor. When we measure the change of resistance under a 20 ppm NO2 gas flow condition at room temperature, both responsivity and response time are drastically improved by Br doping from 1.02% and 23 s to 3.38% and 15 s, respectively.

UR - https://www.scopus.com/pages/publications/85150226030

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DO - 10.1039/d2dt03784j

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VL - 52

SP - 3386

EP - 3390

JO - Dalton Transactions

JF - Dalton Transactions

IS - 11

ER -

Acceleration of NO₂ gas sensitivity in two-dimensional SnSe₂ by Br doping

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