@inproceedings{2ffabf8ec15042cdb02aaf409df4a9d2,
title = "Active and passive RF device compact modeling in CMOS technoloies",
abstract = "A new method for extracting π-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented.",
keywords = "Analytical thermal noise modeling, Macro-modeling, Non-quasi-static effect, RF MOSFET modeling, Substrate resistance, Three-port measurement",
author = "Hyungcheol Shin and Kang, \{In Man\} and Jeon, \{Jong Wook\} and Joonho Gil",
year = "2006",
doi = "10.1109/SISPAD.2006.282828",
language = "English",
isbn = "1424404045",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "17--22",
booktitle = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06",
address = "United States",
note = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 ; Conference date: 06-09-2006 Through 08-09-2006",
}