Adsorption reactions of trimethylgallium and arsine on H/Si(100)-2x1 surface

Jieun Cho; Manik Kumer Ghosh; Cheol Ho Choi

doi:10.5012/bkcs.2009.30.8.1805

Adsorption reactions of trimethylgallium and arsine on H/Si(100)-2x1 surface

Jieun Cho, Manik Kumer Ghosh, Cheol Ho Choi

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The adsorptions of trimethygallium (TMG) and arsine (AsH₃) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of AsH₃ adsorption on the surface was also identified. Among these, the methane loss reaction depositing -Ga(CH₃)₂ was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

Original language	English
Pages (from-to)	1805-1810
Number of pages	6
Journal	Bulletin of the Korean Chemical Society
Volume	30
Issue number	8
DOIs	https://doi.org/10.5012/bkcs.2009.30.8.1805
State	Published - Aug 2009

Keywords

ALD process
Arsine
Mechanism
Silicon surface
Trimethylgallium

Access to Document

10.5012/bkcs.2009.30.8.1805

Cite this

@article{9f25cde4e0cc4498ae20800de510c68e,

title = "Adsorption reactions of trimethylgallium and arsine on H/Si(100)-2x1 surface",

abstract = "The adsorptions of trimethygallium (TMG) and arsine (AsH3) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of AsH3 adsorption on the surface was also identified. Among these, the methane loss reaction depositing -Ga(CH3)2 was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.",

keywords = "ALD process, Arsine, Mechanism, Silicon surface, Trimethylgallium",

author = "Jieun Cho and Ghosh, {Manik Kumer} and Choi, {Cheol Ho}",

year = "2009",

month = aug,

doi = "10.5012/bkcs.2009.30.8.1805",

language = "English",

volume = "30",

pages = "1805--1810",

journal = "Bulletin of the Korean Chemical Society",

issn = "0253-2964",

publisher = "Wiley-Blackwell",

number = "8",

}

TY - JOUR

T1 - Adsorption reactions of trimethylgallium and arsine on H/Si(100)-2x1 surface

AU - Cho, Jieun

AU - Ghosh, Manik Kumer

AU - Choi, Cheol Ho

PY - 2009/8

Y1 - 2009/8

N2 - The adsorptions of trimethygallium (TMG) and arsine (AsH3) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of AsH3 adsorption on the surface was also identified. Among these, the methane loss reaction depositing -Ga(CH3)2 was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

AB - The adsorptions of trimethygallium (TMG) and arsine (AsH3) on H/Si(100)-2x1 surface were theoretically investigated. In the case of TMG adsorption, methane loss reaction, surface methylation, hydrogen loss reaction and ring closing reaction channels were found. The mechanism of AsH3 adsorption on the surface was also identified. Among these, the methane loss reaction depositing -Ga(CH3)2 was found to be the major channel due to its low barrier height and the large exothermicity. The surface methylation reaction is the second most favorable channel. In contrast, arsine turned out to be less reactive on the surface, implying that Arsine surface reaction would be the rate limiting step in the overall ALD process.

KW - ALD process

KW - Arsine

KW - Mechanism

KW - Silicon surface

KW - Trimethylgallium

UR - http://www.scopus.com/inward/record.url?scp=75649086515&partnerID=8YFLogxK

U2 - 10.5012/bkcs.2009.30.8.1805

DO - 10.5012/bkcs.2009.30.8.1805

M3 - Article

AN - SCOPUS:75649086515

SN - 0253-2964

VL - 30

SP - 1805

EP - 1810

JO - Bulletin of the Korean Chemical Society

JF - Bulletin of the Korean Chemical Society

IS - 8

ER -

Adsorption reactions of trimethylgallium and arsine on H/Si(100)-2x1 surface

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this