Al/Au ohmic contact to n-ZnO by dc sputtering

J. H. Kim; J. Y. Moon; H. S. Lee; W. S. Han; H. K. Cho; J. Y. Lee; H. S. Kim

doi:10.1016/j.mseb.2008.11.001

Al/Au ohmic contact to n-ZnO by dc sputtering

J. H. Kim, J. Y. Moon, H. S. Lee, W. S. Han, H. K. Cho, J. Y. Lee, H. S. Kim

Research output: Contribution to journal › Article › peer-review

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Abstract

We deposited Al (50 nm)/Au (250 nm) layers on n-ZnO in order to produce low-resistance ohmic contacts by using a dc sputtering method. The samples were annealed at various temperatures for 1 min in N₂ ambient. The electrical and the structural properties of the Al/Au contact to n-ZnO were investigated. According to the current-voltage measurements, both the as-deposited and annealed samples showed an ohmic behavior. The specific contact resistance of the sample annealed at 200 °C was 1.4 × 10^-4 Ωcm². Further increasing the temperature above 400 °C led to an increase in the specific contact resistance. The Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) measurements were used to characterize the nature of the interfacial layer between the Al/Au and ZnO layers. Possible explanation is given to describe the dependence of the annealing temperature on the electrical properties of Al/Au contact to n-ZnO.

Original language	English
Pages (from-to)	77-79
Number of pages	3
Journal	Materials Science and Engineering: B
Volume	165
Issue number	1-2
DOIs	https://doi.org/10.1016/j.mseb.2008.11.001
State	Published - 25 Nov 2009

Keywords

Contact resistance
DC sputtering
n-ZnO
Ohmic contact

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title = "Al/Au ohmic contact to n-ZnO by dc sputtering",

abstract = "We deposited Al (50 nm)/Au (250 nm) layers on n-ZnO in order to produce low-resistance ohmic contacts by using a dc sputtering method. The samples were annealed at various temperatures for 1 min in N2 ambient. The electrical and the structural properties of the Al/Au contact to n-ZnO were investigated. According to the current-voltage measurements, both the as-deposited and annealed samples showed an ohmic behavior. The specific contact resistance of the sample annealed at 200 °C was 1.4 × 10-4 Ωcm2. Further increasing the temperature above 400 °C led to an increase in the specific contact resistance. The Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) measurements were used to characterize the nature of the interfacial layer between the Al/Au and ZnO layers. Possible explanation is given to describe the dependence of the annealing temperature on the electrical properties of Al/Au contact to n-ZnO.",

keywords = "Contact resistance, DC sputtering, n-ZnO, Ohmic contact",

author = "Kim, {J. H.} and Moon, {J. Y.} and Lee, {H. S.} and Han, {W. S.} and Cho, {H. K.} and Lee, {J. Y.} and Kim, {H. S.}",

year = "2009",

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doi = "10.1016/j.mseb.2008.11.001",

language = "English",

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T1 - Al/Au ohmic contact to n-ZnO by dc sputtering

AU - Kim, J. H.

AU - Moon, J. Y.

AU - Lee, H. S.

AU - Han, W. S.

AU - Cho, H. K.

AU - Lee, J. Y.

AU - Kim, H. S.

PY - 2009/11/25

Y1 - 2009/11/25

N2 - We deposited Al (50 nm)/Au (250 nm) layers on n-ZnO in order to produce low-resistance ohmic contacts by using a dc sputtering method. The samples were annealed at various temperatures for 1 min in N2 ambient. The electrical and the structural properties of the Al/Au contact to n-ZnO were investigated. According to the current-voltage measurements, both the as-deposited and annealed samples showed an ohmic behavior. The specific contact resistance of the sample annealed at 200 °C was 1.4 × 10-4 Ωcm2. Further increasing the temperature above 400 °C led to an increase in the specific contact resistance. The Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) measurements were used to characterize the nature of the interfacial layer between the Al/Au and ZnO layers. Possible explanation is given to describe the dependence of the annealing temperature on the electrical properties of Al/Au contact to n-ZnO.

AB - We deposited Al (50 nm)/Au (250 nm) layers on n-ZnO in order to produce low-resistance ohmic contacts by using a dc sputtering method. The samples were annealed at various temperatures for 1 min in N2 ambient. The electrical and the structural properties of the Al/Au contact to n-ZnO were investigated. According to the current-voltage measurements, both the as-deposited and annealed samples showed an ohmic behavior. The specific contact resistance of the sample annealed at 200 °C was 1.4 × 10-4 Ωcm2. Further increasing the temperature above 400 °C led to an increase in the specific contact resistance. The Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) measurements were used to characterize the nature of the interfacial layer between the Al/Au and ZnO layers. Possible explanation is given to describe the dependence of the annealing temperature on the electrical properties of Al/Au contact to n-ZnO.

KW - Contact resistance

KW - DC sputtering

KW - n-ZnO

KW - Ohmic contact

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U2 - 10.1016/j.mseb.2008.11.001

DO - 10.1016/j.mseb.2008.11.001

M3 - Article

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SN - 0921-5107

VL - 165

SP - 77

EP - 79

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-2

ER -

Al/Au ohmic contact to n-ZnO by dc sputtering

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Keywords

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