AlGaN/GaN FinFET with Extremely Broad Transconductance by Side-Wall Wet Etch

Young Woo Jo; Dong Hyeok Son; Chul Ho Won; Ki Sik Im; Jae Hwa Seo; In Man Kang; Jung Hee Lee

doi:10.1109/LED.2015.2466096

AlGaN/GaN FinFET with Extremely Broad Transconductance by Side-Wall Wet Etch

Young Woo Jo, Dong Hyeok Son, Chul Ho Won, Ki Sik Im, Jae Hwa Seo, In Man Kang, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

AlGaN/GaN-based fin-shaped field-effect transistors with very steep side-wall have been fabricated by utilizing electron-beam lithography and subsequent anisotropic side-wall wet etch in tetramethyl ammonium hydroxide solution. The investigate device demonstrated extremely broad transconductance (g_m) ranging from ∼ 0 to ∼ 8 V at V_D = 10 V, which is essential for high linearity device performance. Pulse measurement showed that the device exhibits negligible gate lag, but still suffers from drain lag. The device with L_GD of 17 μ m exhibited excellent OFF-state characteristic with subthreshold swing of ∼ 58 mV/decade, low OFF-state leakage current of ∼ 10^-12 A, and breakdown voltage of ∼ 400 V at V_G=-9 V.

Original language	English
Article number	7265009
Pages (from-to)	1008-1010
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	10
DOIs	https://doi.org/10.1109/LED.2015.2466096
State	Published - Oct 2015

Keywords

2-DEG
AlGaN/GaN
broad g
FinFET
perpendicular fin
Subthreshold swing
TMAH solution

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10.1109/LED.2015.2466096

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title = "AlGaN/GaN FinFET with Extremely Broad Transconductance by Side-Wall Wet Etch",

abstract = "AlGaN/GaN-based fin-shaped field-effect transistors with very steep side-wall have been fabricated by utilizing electron-beam lithography and subsequent anisotropic side-wall wet etch in tetramethyl ammonium hydroxide solution. The investigate device demonstrated extremely broad transconductance (gm) ranging from ∼ 0 to ∼ 8 V at VD = 10 V, which is essential for high linearity device performance. Pulse measurement showed that the device exhibits negligible gate lag, but still suffers from drain lag. The device with LGD of 17 μ m exhibited excellent OFF-state characteristic with subthreshold swing of ∼ 58 mV/decade, low OFF-state leakage current of ∼ 10-12 A, and breakdown voltage of ∼ 400 V at VG=-9 V.",

keywords = "2-DEG, AlGaN/GaN, broad g, FinFET, perpendicular fin, Subthreshold swing, TMAH solution",

author = "Jo, {Young Woo} and Son, {Dong Hyeok} and Won, {Chul Ho} and Im, {Ki Sik} and Seo, {Jae Hwa} and Kang, {In Man} and Lee, {Jung Hee}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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doi = "10.1109/LED.2015.2466096",

language = "English",

volume = "36",

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T1 - AlGaN/GaN FinFET with Extremely Broad Transconductance by Side-Wall Wet Etch

AU - Jo, Young Woo

AU - Son, Dong Hyeok

AU - Won, Chul Ho

AU - Im, Ki Sik

AU - Seo, Jae Hwa

AU - Kang, In Man

AU - Lee, Jung Hee

PY - 2015/10

Y1 - 2015/10

N2 - AlGaN/GaN-based fin-shaped field-effect transistors with very steep side-wall have been fabricated by utilizing electron-beam lithography and subsequent anisotropic side-wall wet etch in tetramethyl ammonium hydroxide solution. The investigate device demonstrated extremely broad transconductance (gm) ranging from ∼ 0 to ∼ 8 V at VD = 10 V, which is essential for high linearity device performance. Pulse measurement showed that the device exhibits negligible gate lag, but still suffers from drain lag. The device with LGD of 17 μ m exhibited excellent OFF-state characteristic with subthreshold swing of ∼ 58 mV/decade, low OFF-state leakage current of ∼ 10-12 A, and breakdown voltage of ∼ 400 V at VG=-9 V.

AB - AlGaN/GaN-based fin-shaped field-effect transistors with very steep side-wall have been fabricated by utilizing electron-beam lithography and subsequent anisotropic side-wall wet etch in tetramethyl ammonium hydroxide solution. The investigate device demonstrated extremely broad transconductance (gm) ranging from ∼ 0 to ∼ 8 V at VD = 10 V, which is essential for high linearity device performance. Pulse measurement showed that the device exhibits negligible gate lag, but still suffers from drain lag. The device with LGD of 17 μ m exhibited excellent OFF-state characteristic with subthreshold swing of ∼ 58 mV/decade, low OFF-state leakage current of ∼ 10-12 A, and breakdown voltage of ∼ 400 V at VG=-9 V.

KW - 2-DEG

KW - AlGaN/GaN

KW - broad g

KW - FinFET

KW - perpendicular fin

KW - Subthreshold swing

KW - TMAH solution

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U2 - 10.1109/LED.2015.2466096

DO - 10.1109/LED.2015.2466096

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 7265009

ER -

AlGaN/GaN FinFET with Extremely Broad Transconductance by Side-Wall Wet Etch

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Keywords

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