@inproceedings{e210976b7c6643a8bf64e336243485dd,
title = "AlGaN/SiC heterojunction ultraviolet photodiodes",
abstract = "We report on improvement in the deep ultraviolet (DUV) photoresponse of SiC based detectors through the development of n-AlxGa1-xN/i-p SiC heterojunction photodiodes. Fabricated photodiodes have high external quantum efficiency (EQE), greater than 60%, over a wide spectral range from 215-255 nm that is ~10x enhancement in performance over comparable homogenous SiC photodiodes at the shortest wavelength. This is attributed to photogeneration of carriers within the SiC depletion region by DUV illumination of the diode through the n-AlxGa1-xN “window”, as compared to a typical homogenous SiC n-i-p structure where the carriers are photogenerated in the n-type neutral region, resulting in more efficient collection of holes through drift.",
keywords = "AlGaN, Molecular beam epitaxy, SiC, Ultraviolet avalanche photodiodes",
author = "Sampath, {A. V.} and Y. Chen and Q. Zhou and Enck, {R. W.} and Garrett, {G. A.} and Vanmil, {B. L.} and Chung, {R. B.} and Reed, {M. L.} and H. Shen and Campbell, {J. C.} and M. Wraback",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.1206",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd.",
pages = "1206--1209",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
address = "Switzerland",
}