Abstract
We study the alignment properties of liquid crystals (LCs) with a negative dielectric anisotropy on a hydrogenated silicon carbide (SiC:H) film, which is an alternative alignment material. SiC:H layers align LC molecules with a negative dielectric anisotropy via ion beam (IB) irradiation and control the pretilt angle in a range from 90 to 75° depending on the change of IB irradiation angle. Also, when they are exposed to high temperatures for a long time, they show robust properties without degradation. We conclude that although the SiC:H alignment layers are not sensitive to IB irradiation compared with the SiC layers, they show a potential as alternative LC alignment layers for IB irradiation method.
Original language | English |
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Pages (from-to) | 4617-4619 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 47 |
Issue number | 6 PART 1 |
DOIs | |
State | Published - 13 Jun 2008 |
Keywords
- Hydrogenated silicon carbide
- Inorganic alignment layer
- Ion beam irradiation
- Liquid crystal alignment