Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Jae Hwa Seo; Young Woo Jo; Young Jun Yoon; Dong Hyeok Son; Chul Ho Won; Hwan Soo Jang; In Man Kang; Jung Hee Lee

doi:10.1109/LED.2016.2575040

Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Jae Hwa Seo, Young Woo Jo, Young Jun Yoon, Dong Hyeok Son, Chul Ho Won, Hwan Soo Jang, In Man Kang, Jung Hee Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (W_fin) of 120 nm, a fin height (H_fin) of 250 nm, and a gate length (L_G) of 200 nm. The proposed device achieved very low drain leakage (I_off) < 8 × 10^-8 A/mm at 7 V and < 1 × 10^-6 A/mm at 100 V, which is four orders of improvement over I_OFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (I_ON) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (f_T) of 21 GHz.

Original language	English
Article number	7482648
Pages (from-to)	855-858
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1109/LED.2016.2575040
State	Published - Jul 2016

Keywords

Al(In)N/GaN
FinFET
high electron mobility transistor (HEMT)
I-V characteristics
leakage current
short channel effects (SCEs)
TMAH solution

Access to Document

10.1109/LED.2016.2575040

Cite this

@article{6370b732717943c8b62cfbc8befaeb69,

title = "Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications",

abstract = "Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz.",

keywords = "Al(In)N/GaN, FinFET, high electron mobility transistor (HEMT), I-V characteristics, leakage current, short channel effects (SCEs), TMAH solution",

author = "Seo, {Jae Hwa} and Jo, {Young Woo} and Yoon, {Young Jun} and Son, {Dong Hyeok} and Won, {Chul Ho} and Jang, {Hwan Soo} and Kang, {In Man} and Lee, {Jung Hee}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = jul,

doi = "10.1109/LED.2016.2575040",

language = "English",

volume = "37",

pages = "855--858",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

AU - Seo, Jae Hwa

AU - Jo, Young Woo

AU - Yoon, Young Jun

AU - Son, Dong Hyeok

AU - Won, Chul Ho

AU - Jang, Hwan Soo

AU - Kang, In Man

AU - Lee, Jung Hee

PY - 2016/7

Y1 - 2016/7

N2 - Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz.

AB - Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz.

KW - Al(In)N/GaN

KW - FinFET

KW - high electron mobility transistor (HEMT)

KW - I-V characteristics

KW - leakage current

KW - short channel effects (SCEs)

KW - TMAH solution

UR - http://www.scopus.com/inward/record.url?scp=84976869638&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2575040

DO - 10.1109/LED.2016.2575040

M3 - Article

AN - SCOPUS:84976869638

SN - 0741-3106

VL - 37

SP - 855

EP - 858

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 7482648

ER -

Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this