Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Jae Hwa Seo; Young Woo Jo; Young Jun Yoon; Dong Hyeok Son; Chul Ho Won; Hwan Soo Jang; In Man Kang; Jung Hee Lee

doi:10.1109/LED.2016.2575040

Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Jae Hwa Seo
, Young Woo Jo
, Young Jun Yoon
, Dong Hyeok Son
, Chul Ho Won
, Hwan Soo Jang
, In Man Kang
, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University
Daegu Gyeongbuk Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (W_fin) of 120 nm, a fin height (H_fin) of 250 nm, and a gate length (L_G) of 200 nm. The proposed device achieved very low drain leakage (I_off) < 8 × 10^-8 A/mm at 7 V and < 1 × 10^-6 A/mm at 100 V, which is four orders of improvement over I_OFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (I_ON) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (f_T) of 21 GHz.

Original language	English
Article number	7482648
Pages (from-to)	855-858
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1109/LED.2016.2575040
State	Published - Jul 2016

Keywords

Al(In)N/GaN
FinFET
high electron mobility transistor (HEMT)
I-V characteristics
leakage current
short channel effects (SCEs)
TMAH solution

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10.1109/LED.2016.2575040

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@article{6370b732717943c8b62cfbc8befaeb69,

title = "Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications",

abstract = "Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz.",

keywords = "Al(In)N/GaN, FinFET, high electron mobility transistor (HEMT), I-V characteristics, leakage current, short channel effects (SCEs), TMAH solution",

author = "Seo, \{Jae Hwa\} and Jo, \{Young Woo\} and Yoon, \{Young Jun\} and Son, \{Dong Hyeok\} and Won, \{Chul Ho\} and Jang, \{Hwan Soo\} and Kang, \{In Man\} and Lee, \{Jung Hee\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = jul,

doi = "10.1109/LED.2016.2575040",

language = "English",

volume = "37",

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TY - JOUR

T1 - Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

AU - Seo, Jae Hwa

AU - Jo, Young Woo

AU - Yoon, Young Jun

AU - Son, Dong Hyeok

AU - Won, Chul Ho

AU - Jang, Hwan Soo

AU - Kang, In Man

AU - Lee, Jung Hee

PY - 2016/7

Y1 - 2016/7

N2 - Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz.

AB - Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz.

KW - Al(In)N/GaN

KW - FinFET

KW - high electron mobility transistor (HEMT)

KW - I-V characteristics

KW - leakage current

KW - short channel effects (SCEs)

KW - TMAH solution

UR - https://www.scopus.com/pages/publications/84976869638

U2 - 10.1109/LED.2016.2575040

DO - 10.1109/LED.2016.2575040

M3 - Article

AN - SCOPUS:84976869638

SN - 0741-3106

VL - 37

SP - 855

EP - 858

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 7482648

ER -

Al(In)N/GaN Fin-Type HEMT with Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

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Keywords

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