An efficient trade-off between yield and energy for eDRAM caches under process variations

eDRAM cells have been considered as a promising alternative to conventional SRAM cells and already adopted in commercial processors. However, eDRAM cells need to be refreshed periodically, resulting in non-negligible energy and performance overhead. Moreover, under process variations, retention time of eDRAM cells exhibits non-uniform distributions. This phenomenon affects both manufacturing yield and eDRAM refresh burden. In this paper, we first analyze eDRAM module (cache) yield and retention time failure patterns under process variations. Based on our analysis, we disclose most of the failing cache lines have only one faulty cell and propose a cost-efficient technique to save those one-cell failing cache lines. Our technique maintains a one-cell failing line (OFL) buffer which manages the status of the one-cell failing cache lines. By effectively curing one-cell failing lines, our technique significantly improves manufacturing yield by up to 46.1% under the identical refresh intervals. In addition, our technique can be used to loosen refresh intervals with comparable yield. By using the loosened refresh intervals, our technique reduces energy per instruction and improves performance by up to 19.9% and 1.3%, respectively.