TY - JOUR
T1 - Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors
AU - Cho, Seongjae
AU - Lee, Jae Sung
AU - Kim, Kyung Rok
AU - Park, Byung Gook
AU - Harris, James S.
AU - Kang, In Man
PY - 2011/12
Y1 - 2011/12
N2 - The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length. Because of the unique current drive and inversion layer formation mechanisms of a TFET compared to a conventional MOSFET, the gate-bias dependence values of the primary small-signal parameters of a GAA TFET also differ. Based on understanding these parameters, the high-frequency performances of GAA TFETs were investigated using a technology computer-aided design simulation. A nonquasi-static radio-frequency model was used to extract the small-signal parameters, which were verified up to 100 GHz. The modeling results showed excellent agreement with the Y -parameters up to the cutoff frequency fT.
AB - The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length. Because of the unique current drive and inversion layer formation mechanisms of a TFET compared to a conventional MOSFET, the gate-bias dependence values of the primary small-signal parameters of a GAA TFET also differ. Based on understanding these parameters, the high-frequency performances of GAA TFETs were investigated using a technology computer-aided design simulation. A nonquasi-static radio-frequency model was used to extract the small-signal parameters, which were verified up to 100 GHz. The modeling results showed excellent agreement with the Y -parameters up to the cutoff frequency fT.
KW - Gate-all-around (GAA)
KW - modeling
KW - nonquasi-static (NQS)
KW - radio-frequency (RF)
KW - small-signal parameters
KW - technology computer-aided design (TCAD)
KW - tunneling field-effect transistor (TFET)
UR - http://www.scopus.com/inward/record.url?scp=82155195856&partnerID=8YFLogxK
U2 - 10.1109/TED.2011.2167335
DO - 10.1109/TED.2011.2167335
M3 - Article
AN - SCOPUS:82155195856
SN - 0018-9383
VL - 58
SP - 4164
EP - 4171
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
M1 - 6043869
ER -