Analysis of flicker noise in two-dimensional multilayer MoS₂ transistors

Using low-frequency noise (LFN) analysis, we examined the quality of the semiconductor, oxide, and oxide-semiconductor interface of back-gated multilayer MoS₂ transistors. We also investigated the mechanism of the LFN and extracted γ exponents from the LFN behavior, 1/f^γ; the value of γ was >1 at negative gate bias because of active slow traps. As V_G increased, the slow traps were filled and thus γ decreased, stabilizing at ≈0.95. Various other parameters extracted from the LFN indicated that the carrier number fluctuation (Δn) model was the dominant origin of the LFN. The multilayer MoS₂ structure had better noise immunity than a single-layer case in air.