Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	4216
Journal	Journal of Nanoscience and Nanotechnology
Volume	21
State	Published - 2021

Cite this

@article{42c39af462e34cef954fbc7513bc5cf5,

title = "Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory",

author = "Kang, {In Man}",

year = "2021",

language = "English",

volume = "21",

pages = "4216",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}