TY - JOUR
T1 - Analysis of reset discharge characteristics in AC-Plasma display panel with various sustain gaps using Vt close-curve
AU - Park, Ki Hyung
AU - Tae, Heung Sik
AU - Seo, Jeong Hyun
PY - 2008
Y1 - 2008
N2 - The effects of various sustain gaps on the reset discharge characteristics, particularly the discharge stability, are examined based on a Vt close-curve analysis. The Vt close-curve analysis shows that the reset discharge region producing a stable discharge under an MgO cathode condition is reduced in proportion to the increase in the sustain gap, resulting in discharge instability when a conventional reset waveform is applied with a wide-sustain-gap (over 200 μm) structure. Based on the Vt close-curve analysis, a modified reset waveform suitable for a wide-sustain-gap (= 200 μm) structure is proposed to prevent an unstable discharge. The effects of two parameters Vadd-bias and Vcom-bias in the modified reset waveform on the reset discharge as well as the address and first sustain discharges, are examined in detail.
AB - The effects of various sustain gaps on the reset discharge characteristics, particularly the discharge stability, are examined based on a Vt close-curve analysis. The Vt close-curve analysis shows that the reset discharge region producing a stable discharge under an MgO cathode condition is reduced in proportion to the increase in the sustain gap, resulting in discharge instability when a conventional reset waveform is applied with a wide-sustain-gap (over 200 μm) structure. Based on the Vt close-curve analysis, a modified reset waveform suitable for a wide-sustain-gap (= 200 μm) structure is proposed to prevent an unstable discharge. The effects of two parameters Vadd-bias and Vcom-bias in the modified reset waveform on the reset discharge as well as the address and first sustain discharges, are examined in detail.
KW - Discharge stability
KW - Modified reset waveform
KW - V close-curve analysis
KW - Various sustain gaps
KW - Wide-sustain-gap of 200 μm
UR - http://www.scopus.com/inward/record.url?scp=50549103135&partnerID=8YFLogxK
U2 - 10.1109/TED.2008.927947
DO - 10.1109/TED.2008.927947
M3 - Article
AN - SCOPUS:50549103135
SN - 0018-9383
VL - 55
SP - 2329
EP - 2337
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
ER -