@inproceedings{cf96b3bca93e40f4a898f8b10221887b,
title = "Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit",
abstract = " In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz.",
author = "Jung, {Yung Hun} and Kang, {In Man} and Seongjae Cho",
note = "Publisher Copyright: {\textcopyright} 2018 The Institute of Electronics, Information and Communication Engineers (IEICE).; 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 ; Conference date: 01-08-2018 Through 04-08-2018",
year = "2018",
month = dec,
day = "31",
doi = "10.23919/PIERS.2018.8598056",
language = "English",
series = "Progress in Electromagnetics Research Symposium",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2550--2553",
booktitle = "2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings",
address = "United States",
}