Analysis of Structural and Electrical Properties of Solution-Processed Zinc Oxide Films for Thin-Film Transistor Application

Jin Hyuk Bae; Jae Eun Hwang; Hong Doo Kim; Xue Zhang; Jaehoon Park

doi:10.1080/15421406.2014.936545

Analysis of Structural and Electrical Properties of Solution-Processed Zinc Oxide Films for Thin-Film Transistor Application

Jin Hyuk Bae, Jae Eun Hwang, Hong Doo Kim, Xue Zhang, Jaehoon Park

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We investigated the electrical properties of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) with varying the size of ZnO crystallites in the film. The TFTs having the bead-shaped ZnO crystallites with the average diameter of 2 m apparently operated in depletion mode, whereas the devices exhibited an accumulation operation when the crystallite size of ZnO reduced to sub-micron range. Considering the difference between bulk and channel electrical conductivities in solution-processed ZnO TFTs, these results are explained with the interplay between the crystallite size of ZnO and the electrical conduction in the TFT.

Original language	English
Pages (from-to)	28-34
Number of pages	7
Journal	Molecular Crystals and Liquid Crystals
Volume	600
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2014.936545
State	Published - 2 Sep 2014

Keywords

bulk conductivity
channel conductivity
charge trap
Oxide semiconductor
Thin-film transistor

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title = "Analysis of Structural and Electrical Properties of Solution-Processed Zinc Oxide Films for Thin-Film Transistor Application",

abstract = "We investigated the electrical properties of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) with varying the size of ZnO crystallites in the film. The TFTs having the bead-shaped ZnO crystallites with the average diameter of 2 m apparently operated in depletion mode, whereas the devices exhibited an accumulation operation when the crystallite size of ZnO reduced to sub-micron range. Considering the difference between bulk and channel electrical conductivities in solution-processed ZnO TFTs, these results are explained with the interplay between the crystallite size of ZnO and the electrical conduction in the TFT.",

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author = "Bae, {Jin Hyuk} and Hwang, {Jae Eun} and Kim, {Hong Doo} and Xue Zhang and Jaehoon Park",

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AU - Bae, Jin Hyuk

AU - Hwang, Jae Eun

AU - Kim, Hong Doo

AU - Zhang, Xue

AU - Park, Jaehoon

PY - 2014/9/2

Y1 - 2014/9/2

N2 - We investigated the electrical properties of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) with varying the size of ZnO crystallites in the film. The TFTs having the bead-shaped ZnO crystallites with the average diameter of 2 m apparently operated in depletion mode, whereas the devices exhibited an accumulation operation when the crystallite size of ZnO reduced to sub-micron range. Considering the difference between bulk and channel electrical conductivities in solution-processed ZnO TFTs, these results are explained with the interplay between the crystallite size of ZnO and the electrical conduction in the TFT.

AB - We investigated the electrical properties of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) with varying the size of ZnO crystallites in the film. The TFTs having the bead-shaped ZnO crystallites with the average diameter of 2 m apparently operated in depletion mode, whereas the devices exhibited an accumulation operation when the crystallite size of ZnO reduced to sub-micron range. Considering the difference between bulk and channel electrical conductivities in solution-processed ZnO TFTs, these results are explained with the interplay between the crystallite size of ZnO and the electrical conduction in the TFT.

KW - bulk conductivity

KW - channel conductivity

KW - charge trap

KW - Oxide semiconductor

KW - Thin-film transistor

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Analysis of Structural and Electrical Properties of Solution-Processed Zinc Oxide Films for Thin-Film Transistor Application

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