TY - GEN
T1 - Analysis of TSV-to-TSV coupling with high-impedance termination in 3D ICs
AU - Song, Taigon
AU - Liu, Chang
AU - Kim, Dae Hyun
AU - Lim, Sung Kyu
AU - Cho, Jonghyun
AU - Kim, Joohee
AU - Pak, Jun So
AU - Ahn, Seungyoung
AU - Kim, Joungho
AU - Yoon, Kihyun
PY - 2011
Y1 - 2011
N2 - It is widely-known that coupling exists between adjacent through-silicon vias (TSVs) in 3D ICs. Since this TSV-to-TSV coupling is not negligible, it is highly likely that TSV-to-TSV coupling affects crosstalk significantly. Although a few works have already analyzed coupling in 3D ICs, they used S-parameter-based methods under the assumption that all ports in their simulation structures are under 50- termination condition. However, this 50- termination condition does not occur at ports (pins) of gates inside a 3D IC. In this paper, therefore, we analyze TSV-to-TSV coupling in 3D ICs based on a lumped circuit model with a realistic high-impedance termination condition. We also analyze how channel affect TSV-to-TSV coupling differently in different frequency ranges. Based on our results, we propose a technique to reduce TSV-to-TSV coupling in 3D ICs.
AB - It is widely-known that coupling exists between adjacent through-silicon vias (TSVs) in 3D ICs. Since this TSV-to-TSV coupling is not negligible, it is highly likely that TSV-to-TSV coupling affects crosstalk significantly. Although a few works have already analyzed coupling in 3D ICs, they used S-parameter-based methods under the assumption that all ports in their simulation structures are under 50- termination condition. However, this 50- termination condition does not occur at ports (pins) of gates inside a 3D IC. In this paper, therefore, we analyze TSV-to-TSV coupling in 3D ICs based on a lumped circuit model with a realistic high-impedance termination condition. We also analyze how channel affect TSV-to-TSV coupling differently in different frequency ranges. Based on our results, we propose a technique to reduce TSV-to-TSV coupling in 3D ICs.
KW - 3D IC
KW - Capacitive termination
KW - Coupling
KW - Crosstalk
KW - High impedance termination
KW - Through-Silicon Via (TSV)
UR - https://www.scopus.com/pages/publications/79959274550
U2 - 10.1109/ISQED.2011.5770714
DO - 10.1109/ISQED.2011.5770714
M3 - Conference contribution
AN - SCOPUS:79959274550
SN - 9781612849140
T3 - Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011
SP - 122
EP - 128
BT - Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011
T2 - 12th International Symposium on Quality Electronic Design, ISQED 2011
Y2 - 14 March 2011 through 16 March 2011
ER -