Analytical thermal noise model suitable for circuit design using short-channel MOSFETs

Jongwook Jeon; Seyoung Kim; In Man Kang; Kwangsuk Han; Kwyro Lee; Hyungcheol Shin

doi:10.1109/RFIC.2005.1489894

Analytical thermal noise model suitable for circuit design using short-channel MOSFETs

Jongwook Jeon, Seyoung Kim, In Man Kang, Kwangsuk Han, Kwyro Lee, Hyungcheol Shin

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This paper proposes a new analytical noise model for short-channel MOSFETs which covers both the linear and the saturation regions. Both the channel thermal noise model and the gate-induced model are presented. The analytical equations for the noise parameters are also derived. Modeling results show an excellent agreement with the measured noise parameter data.

Original language	English
Title of host publication	2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers
Editors	A. Jerng
Pages	637-640
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2005.1489894
State	Published - 2005
Event	2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States Duration: 12 Jun 2005 → 14 Jun 2005

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)	1529-2517

Conference

Conference	2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers
Country/Territory	United States
City	Long Beach, CA
Period	12/06/05 → 14/06/05

Keywords

Drain thermal noise
Induced gate noise
Noise parameters
RF CMOS
Velocity saturation effect

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10.1109/RFIC.2005.1489894

Cite this

Jeon, J., Kim, S., Kang, I. M., Han, K., Lee, K., & Shin, H. (2005). Analytical thermal noise model suitable for circuit design using short-channel MOSFETs. In A. Jerng (Ed.), 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers (pp. 637-640). Article RTUIFR-24 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). https://doi.org/10.1109/RFIC.2005.1489894

@inproceedings{25a7016876904cd99b6b843e8653bdd3,

title = "Analytical thermal noise model suitable for circuit design using short-channel MOSFETs",

abstract = "This paper proposes a new analytical noise model for short-channel MOSFETs which covers both the linear and the saturation regions. Both the channel thermal noise model and the gate-induced model are presented. The analytical equations for the noise parameters are also derived. Modeling results show an excellent agreement with the measured noise parameter data.",

keywords = "Drain thermal noise, Induced gate noise, Noise parameters, RF CMOS, Velocity saturation effect",

author = "Jongwook Jeon and Seyoung Kim and Kang, {In Man} and Kwangsuk Han and Kwyro Lee and Hyungcheol Shin",

year = "2005",

doi = "10.1109/RFIC.2005.1489894",

language = "English",

isbn = "0780389832",

series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",

pages = "637--640",

editor = "A. Jerng",

booktitle = "2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers",

note = "2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers ; Conference date: 12-06-2005 Through 14-06-2005",

}

Jeon, J, Kim, S, Kang, IM, Han, K, Lee, K & Shin, H 2005, Analytical thermal noise model suitable for circuit design using short-channel MOSFETs. in A Jerng (ed.), 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers., RTUIFR-24, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 637-640, 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers, Long Beach, CA, United States, 12/06/05. https://doi.org/10.1109/RFIC.2005.1489894

Analytical thermal noise model suitable for circuit design using short-channel MOSFETs. / Jeon, Jongwook; Kim, Seyoung; Kang, In Man et al.
2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers. ed. / A. Jerng. 2005. p. 637-640 RTUIFR-24 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analytical thermal noise model suitable for circuit design using short-channel MOSFETs

AU - Jeon, Jongwook

AU - Kim, Seyoung

AU - Kang, In Man

AU - Han, Kwangsuk

AU - Lee, Kwyro

AU - Shin, Hyungcheol

PY - 2005

Y1 - 2005

N2 - This paper proposes a new analytical noise model for short-channel MOSFETs which covers both the linear and the saturation regions. Both the channel thermal noise model and the gate-induced model are presented. The analytical equations for the noise parameters are also derived. Modeling results show an excellent agreement with the measured noise parameter data.

AB - This paper proposes a new analytical noise model for short-channel MOSFETs which covers both the linear and the saturation regions. Both the channel thermal noise model and the gate-induced model are presented. The analytical equations for the noise parameters are also derived. Modeling results show an excellent agreement with the measured noise parameter data.

KW - Drain thermal noise

KW - Induced gate noise

KW - Noise parameters

KW - RF CMOS

KW - Velocity saturation effect

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DO - 10.1109/RFIC.2005.1489894

M3 - Conference contribution

AN - SCOPUS:27644530389

SN - 0780389832

T3 - Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

SP - 637

EP - 640

BT - 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers

A2 - Jerng, A.

T2 - 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers

Y2 - 12 June 2005 through 14 June 2005

ER -

Analytical thermal noise model suitable for circuit design using short-channel MOSFETs

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Keywords

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