Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology

Sung Yun Woo; Won Mook Kang; Kyu Bong Choi; Jangsaeng Kim; Chul Heung Kim; Jong Ho Bae; Byung Gook Park; Jong Ho Lee

doi:10.1109/EDTM.2019.8731117

Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology

Sung Yun Woo, Won Mook Kang, Kyu Bong Choi, Jangsaeng Kim, Chul Heung Kim, Jong Ho Bae, Byung Gook Park, Jong Ho Lee

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A scaled positive feedback (PF) device based on 14 nm FinFET technology is systematically investigated by using TCAD simulation tool. By adapting multiple gates to a scaled PF device, electrical electron and hole injection barriers are formed without dopant implantation for implementing the PF operation. In addition, the characteristics with steep subthreshold swing (SS) are performed by hole and electron concentrations stored in charge storage layers of the scaled PF device.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	404-406
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731117
State	Published - Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Keywords

FinFET
Positive Feedback device
and Steep subthreshold swing

Access to Document

10.1109/EDTM.2019.8731117

Cite this

Woo, S. Y., Kang, W. M., Choi, K. B., Kim, J., Kim, C. H., Bae, J. H., Park, B. G., & Lee, J. H. (2019). Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 404-406). Article 8731117 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731117

Woo, Sung Yun ; Kang, Won Mook ; Choi, Kyu Bong et al. / Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 404-406 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

@inproceedings{841921d125ae4031a3ad723bc466d6b1,

title = "Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology",

abstract = "A scaled positive feedback (PF) device based on 14 nm FinFET technology is systematically investigated by using TCAD simulation tool. By adapting multiple gates to a scaled PF device, electrical electron and hole injection barriers are formed without dopant implantation for implementing the PF operation. In addition, the characteristics with steep subthreshold swing (SS) are performed by hole and electron concentrations stored in charge storage layers of the scaled PF device.",

keywords = "FinFET, Positive Feedback device, and Steep subthreshold swing",

author = "Woo, {Sung Yun} and Kang, {Won Mook} and Choi, {Kyu Bong} and Jangsaeng Kim and Kim, {Chul Heung} and Bae, {Jong Ho} and Park, {Byung Gook} and Lee, {Jong Ho}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731117",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "404--406",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

address = "United States",

}

Woo, SY, Kang, WM, Choi, KB, Kim, J, Kim, CH, Bae, JH, Park, BG & Lee, JH 2019, Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731117, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 404-406, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731117

Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology. / Woo, Sung Yun; Kang, Won Mook; Choi, Kyu Bong et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 404-406 8731117 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology

AU - Woo, Sung Yun

AU - Kang, Won Mook

AU - Choi, Kyu Bong

AU - Kim, Jangsaeng

AU - Kim, Chul Heung

AU - Bae, Jong Ho

AU - Park, Byung Gook

AU - Lee, Jong Ho

PY - 2019/3

Y1 - 2019/3

N2 - A scaled positive feedback (PF) device based on 14 nm FinFET technology is systematically investigated by using TCAD simulation tool. By adapting multiple gates to a scaled PF device, electrical electron and hole injection barriers are formed without dopant implantation for implementing the PF operation. In addition, the characteristics with steep subthreshold swing (SS) are performed by hole and electron concentrations stored in charge storage layers of the scaled PF device.

AB - A scaled positive feedback (PF) device based on 14 nm FinFET technology is systematically investigated by using TCAD simulation tool. By adapting multiple gates to a scaled PF device, electrical electron and hole injection barriers are formed without dopant implantation for implementing the PF operation. In addition, the characteristics with steep subthreshold swing (SS) are performed by hole and electron concentrations stored in charge storage layers of the scaled PF device.

KW - FinFET

KW - Positive Feedback device

KW - and Steep subthreshold swing

UR - http://www.scopus.com/inward/record.url?scp=85067832018&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731117

DO - 10.1109/EDTM.2019.8731117

M3 - Conference contribution

AN - SCOPUS:85067832018

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 404

EP - 406

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Woo SY, Kang WM, Choi KB, Kim J, Kim CH, Bae JH et al. Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 404-406. 8731117. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731117

Analyzation of Positive Feedback device with Steep Subthreshold Swing Characteristics in 14 nm FinFET Technology

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this