Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO

K. Ip, K. H. Baik, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, B. Luo, F. Ren, J. M. Zavada

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Summary form only given. The authors report on the annealing temperature dependence of contact resistance and morphology for Ti/Al/Pt/Au contacts on high-quality, undoped (n∼1017 cm-3) bulk ZnO substrates. Two different surface cleaning procedures were employed, although it was found that in general the as-received surface produced the lowest specific contact resistances.

Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-124
Number of pages2
ISBN (Electronic)0780378202
DOIs
StatePublished - 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 25 Aug 200327 Aug 2003

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-January

Conference

Conference2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/TerritoryUnited States
CitySan Diego
Period25/08/0327/08/03

Keywords

  • Annealing
  • Contact resistance
  • Gold
  • Ohmic contacts
  • Stability
  • Surface cleaning
  • Surface morphology
  • Surface resistance
  • Temperature dependence
  • Zinc oxide

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