TY - JOUR
T1 - Annealing temperature effect on the temperature coefficient of resistance for vanadium oxide (VOx) thin films as bolometer materials
AU - Lee, Junyeop
AU - Kim, Yeongsam
AU - Jung, Dong Geon
AU - Hwang, Seongpil
AU - Kong, Seong Ho
AU - Jung, Daewoong
N1 - Publisher Copyright:
© 2023 The Japan Society of Applied Physics.
PY - 2023/6/1
Y1 - 2023/6/1
N2 - Vanadium oxides (VOx) are representative materials with a high temperature coefficient of resistance (TCR); however, VOx films can have complex phase structures that are dependent on their fabrication method. While past research has focused on the TCR behavior of VOx thin films, this study investigates the TCR of VOx thin films annealed at different temperatures as well as focuses on the relation between the VOx phase, surface morphology, sheet resistance, and TCR. VOx thin films were deposited via radio-frequency magnetron sputtering and annealed at 150 °C-500 °C in 20% O2. Alongside morphological changes, the deposited VOx thin films exhibited phase changes from V2O5 to VO2 with increasing annealing temperature. The VOx thin films annealed at 300 °C and 330 °C showed the lowest and highest average TCR of 1.25%/°C and 3.34%/°C, respectively. Furthermore, a bolometer fabricated using the higher-TCR film showed more than 5-fold infrared responsivity under the same infrared intensity.
AB - Vanadium oxides (VOx) are representative materials with a high temperature coefficient of resistance (TCR); however, VOx films can have complex phase structures that are dependent on their fabrication method. While past research has focused on the TCR behavior of VOx thin films, this study investigates the TCR of VOx thin films annealed at different temperatures as well as focuses on the relation between the VOx phase, surface morphology, sheet resistance, and TCR. VOx thin films were deposited via radio-frequency magnetron sputtering and annealed at 150 °C-500 °C in 20% O2. Alongside morphological changes, the deposited VOx thin films exhibited phase changes from V2O5 to VO2 with increasing annealing temperature. The VOx thin films annealed at 300 °C and 330 °C showed the lowest and highest average TCR of 1.25%/°C and 3.34%/°C, respectively. Furthermore, a bolometer fabricated using the higher-TCR film showed more than 5-fold infrared responsivity under the same infrared intensity.
KW - annealing effect
KW - phase transition
KW - surface morphology change
KW - TCR
KW - temperature coefficient of resistance
KW - thermoresistive effect
KW - vanadium oxide thin films
UR - http://www.scopus.com/inward/record.url?scp=85151540826&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/acc03d
DO - 10.35848/1347-4065/acc03d
M3 - Article
AN - SCOPUS:85151540826
SN - 0021-4922
VL - 62
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - SG
M1 - SG1039
ER -