Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors

Si Yun Park; Sunyoung Kim; Jeeyoung Yoo; Keon Hee Lim; Eungkyu Lee; Kyongjun Kim; Joohee Kim; Youn Sang Kim

doi:10.1039/c3ra47437b

Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors

Si Yun Park, Sunyoung Kim, Jeeyoung Yoo, Keon Hee Lim, Eungkyu Lee, Kyongjun Kim, Joohee Kim, Youn Sang Kim

School of Energy Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We fabricated zinc oxide (ZnO) TFTs using a zinc ammine complex with various zinc oxide sources such as ZnO, intrinsic Zn(OH)₂, and precipitated Zn(OH)₂. From the analyses of the reaction mechanism, surface morphology, crystal structure, and oxygen vacancy in the ZnO films, we confirmed the same intermediate in ZnO semiconductor films irrespective of the type of zinc oxide source in the zinc ammine complex precursor. The results showed the analogous value of the average field effect mobility, on/off current ratio, and turn-on voltage in all solution-processed ZnO TFTs. In conclusion, we confirmed that directly dissolving pristine ZnO into ammonia water is the most efficient method for preparing the ZnO semiconductor precursor, the zinc ammine complex, for low-temperature, solution-processed, and high performance ZnO TFTs.

Original language	English
Pages (from-to)	11295-11299
Number of pages	5
Journal	RSC Advances
Volume	4
Issue number	22
DOIs	https://doi.org/10.1039/c3ra47437b
State	Published - 2014

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title = "Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors",

abstract = "We fabricated zinc oxide (ZnO) TFTs using a zinc ammine complex with various zinc oxide sources such as ZnO, intrinsic Zn(OH)2, and precipitated Zn(OH)2. From the analyses of the reaction mechanism, surface morphology, crystal structure, and oxygen vacancy in the ZnO films, we confirmed the same intermediate in ZnO semiconductor films irrespective of the type of zinc oxide source in the zinc ammine complex precursor. The results showed the analogous value of the average field effect mobility, on/off current ratio, and turn-on voltage in all solution-processed ZnO TFTs. In conclusion, we confirmed that directly dissolving pristine ZnO into ammonia water is the most efficient method for preparing the ZnO semiconductor precursor, the zinc ammine complex, for low-temperature, solution-processed, and high performance ZnO TFTs.",

author = "Park, {Si Yun} and Sunyoung Kim and Jeeyoung Yoo and Lim, {Keon Hee} and Eungkyu Lee and Kyongjun Kim and Joohee Kim and Kim, {Youn Sang}",

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doi = "10.1039/c3ra47437b",

language = "English",

volume = "4",

pages = "11295--11299",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

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T1 - Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors

AU - Park, Si Yun

AU - Kim, Sunyoung

AU - Yoo, Jeeyoung

AU - Lim, Keon Hee

AU - Lee, Eungkyu

AU - Kim, Kyongjun

AU - Kim, Joohee

AU - Kim, Youn Sang

PY - 2014

Y1 - 2014

N2 - We fabricated zinc oxide (ZnO) TFTs using a zinc ammine complex with various zinc oxide sources such as ZnO, intrinsic Zn(OH)2, and precipitated Zn(OH)2. From the analyses of the reaction mechanism, surface morphology, crystal structure, and oxygen vacancy in the ZnO films, we confirmed the same intermediate in ZnO semiconductor films irrespective of the type of zinc oxide source in the zinc ammine complex precursor. The results showed the analogous value of the average field effect mobility, on/off current ratio, and turn-on voltage in all solution-processed ZnO TFTs. In conclusion, we confirmed that directly dissolving pristine ZnO into ammonia water is the most efficient method for preparing the ZnO semiconductor precursor, the zinc ammine complex, for low-temperature, solution-processed, and high performance ZnO TFTs.

AB - We fabricated zinc oxide (ZnO) TFTs using a zinc ammine complex with various zinc oxide sources such as ZnO, intrinsic Zn(OH)2, and precipitated Zn(OH)2. From the analyses of the reaction mechanism, surface morphology, crystal structure, and oxygen vacancy in the ZnO films, we confirmed the same intermediate in ZnO semiconductor films irrespective of the type of zinc oxide source in the zinc ammine complex precursor. The results showed the analogous value of the average field effect mobility, on/off current ratio, and turn-on voltage in all solution-processed ZnO TFTs. In conclusion, we confirmed that directly dissolving pristine ZnO into ammonia water is the most efficient method for preparing the ZnO semiconductor precursor, the zinc ammine complex, for low-temperature, solution-processed, and high performance ZnO TFTs.

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DO - 10.1039/c3ra47437b

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JO - RSC Advances

JF - RSC Advances

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Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors

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