Architecting large-scale SRAM arrays with monolithic 3D integration

Joonho Kong, Young Ho Gong, Sung Woo Chung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

In this paper, we architect large-scale SRAM arrays with monolithic 3D (M3D) integration technology. We introduce M3D-based SRAM arrays with three different ways of integration: M3D-R (vertical routing-only), M3D-VBL (vertical bitline), and M3D-VWL (vertical wordline). We also apply M3D-based SRAM arrays to last-level caches: Tag arrays for eDRAM LLCs and data arrays for SRAM LLCs. The proposed LLCs with M3D-based SRAM arrays lead to better performance and lower energy by 0.02%∼1.7% and 49.1%∼79.1%, respectively, compared to that with TSV-based 3D SRAM arrays.

Original languageEnglish
Title of host publicationISLPED 2017 - IEEE/ACM International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509060238
DOIs
StatePublished - 11 Aug 2017
Event22nd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017 - Taipei, Taiwan, Province of China
Duration: 24 Jul 201726 Jul 2017

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Conference

Conference22nd IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017
Country/TerritoryTaiwan, Province of China
CityTaipei
Period24/07/1726/07/17

Keywords

  • Energy
  • Last-Level Caches
  • Monolithic 3D Integrations
  • Performance

Cite this