Artificially engineered nanostrain in FeSexTe1-x superconductor thin films for supercurrent enhancement

Sehun Seo; Heesung Noh; Ning Li; Jianyi Jiang; Chiara Tarantini; Ruochen Shi; Soon Gil Jung; Myeong Jun Oh; Mengchao Liu; Jongmin Lee; Genda Gu; Youn Jung Jo; Tuson Park; Eric E. Hellstrom; Peng Gao; Sanghan Lee

doi:10.1038/s41427-019-0186-y

Artificially engineered nanostrain in FeSe_xTe_1-x superconductor thin films for supercurrent enhancement

Sehun Seo, Heesung Noh, Ning Li, Jianyi Jiang, Chiara Tarantini, Ruochen Shi, Soon Gil Jung, Myeong Jun Oh, Mengchao Liu, Jongmin Lee, Genda Gu, Youn Jung Jo, Tuson Park, Eric E. Hellstrom, Peng Gao, Sanghan Lee

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Although nanoscale deformation, such as nanostrain in iron-chalcogenide (FeSe_xTe_1−x, FST) thin films, has attracted attention owing to its enhancement of general superconducting properties, including critical current density (J_c) and critical transition temperature, the development of this technique has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO₂ inside an FST matrix using sequential pulsed laser deposition. By means of transmission electron microscopy and geometric phase analysis, we verified that the injection of a trace amount of CeO₂ forms nanoscale defects, with a nanostrained region of tensile strain (ε_zz ≅ 0.02) along the c-axis of the FST matrix. This nanostrained FST thin film achieves a remarkable J_c of 3.5 MA/cm² under a self-field at 6 K and a highly enhanced J_c under the entire magnetic field with respect to those of a pristine FST thin film.

Original language	English
Article number	7
Journal	NPG Asia Materials
Volume	12
Issue number	1
DOIs	https://doi.org/10.1038/s41427-019-0186-y
State	Published - 1 Dec 2020

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title = "Artificially engineered nanostrain in FeSexTe1-x superconductor thin films for supercurrent enhancement",

abstract = "Although nanoscale deformation, such as nanostrain in iron-chalcogenide (FeSexTe1−x, FST) thin films, has attracted attention owing to its enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, the development of this technique has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2 inside an FST matrix using sequential pulsed laser deposition. By means of transmission electron microscopy and geometric phase analysis, we verified that the injection of a trace amount of CeO2 forms nanoscale defects, with a nanostrained region of tensile strain (εzz ≅ 0.02) along the c-axis of the FST matrix. This nanostrained FST thin film achieves a remarkable Jc of 3.5 MA/cm2 under a self-field at 6 K and a highly enhanced Jc under the entire magnetic field with respect to those of a pristine FST thin film.",

author = "Sehun Seo and Heesung Noh and Ning Li and Jianyi Jiang and Chiara Tarantini and Ruochen Shi and Jung, {Soon Gil} and {Jun Oh}, Myeong and Mengchao Liu and Jongmin Lee and Genda Gu and Jo, {Youn Jung} and Tuson Park and Hellstrom, {Eric E.} and Peng Gao and Sanghan Lee",

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doi = "10.1038/s41427-019-0186-y",

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T1 - Artificially engineered nanostrain in FeSexTe1-x superconductor thin films for supercurrent enhancement

AU - Seo, Sehun

AU - Noh, Heesung

AU - Li, Ning

AU - Jiang, Jianyi

AU - Tarantini, Chiara

AU - Shi, Ruochen

AU - Jung, Soon Gil

AU - Jun Oh, Myeong

AU - Liu, Mengchao

AU - Lee, Jongmin

AU - Gu, Genda

AU - Jo, Youn Jung

AU - Park, Tuson

AU - Hellstrom, Eric E.

AU - Gao, Peng

AU - Lee, Sanghan

PY - 2020/12/1

Y1 - 2020/12/1

N2 - Although nanoscale deformation, such as nanostrain in iron-chalcogenide (FeSexTe1−x, FST) thin films, has attracted attention owing to its enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, the development of this technique has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2 inside an FST matrix using sequential pulsed laser deposition. By means of transmission electron microscopy and geometric phase analysis, we verified that the injection of a trace amount of CeO2 forms nanoscale defects, with a nanostrained region of tensile strain (εzz ≅ 0.02) along the c-axis of the FST matrix. This nanostrained FST thin film achieves a remarkable Jc of 3.5 MA/cm2 under a self-field at 6 K and a highly enhanced Jc under the entire magnetic field with respect to those of a pristine FST thin film.

AB - Although nanoscale deformation, such as nanostrain in iron-chalcogenide (FeSexTe1−x, FST) thin films, has attracted attention owing to its enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, the development of this technique has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2 inside an FST matrix using sequential pulsed laser deposition. By means of transmission electron microscopy and geometric phase analysis, we verified that the injection of a trace amount of CeO2 forms nanoscale defects, with a nanostrained region of tensile strain (εzz ≅ 0.02) along the c-axis of the FST matrix. This nanostrained FST thin film achieves a remarkable Jc of 3.5 MA/cm2 under a self-field at 6 K and a highly enhanced Jc under the entire magnetic field with respect to those of a pristine FST thin film.

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DO - 10.1038/s41427-019-0186-y

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JO - NPG Asia Materials

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ER -

Artificially engineered nanostrain in FeSe_xTe_1-x superconductor thin films for supercurrent enhancement

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