@inproceedings{818408d4968b4473a586bb92ab46a4b3,
title = "ASymmetrically Recessed (ASR) 0.13μm In0.65GaAs HEMT's using Double-Deck Shaped (DDS) gate technology",
abstract = "InP-based HEMTs have shown the highest cut-off frequency (fT) and the lowest microwave noise characteristics among the all three terminal semiconductor devices during the last several decades [1]. However, impact ionization in the low band-gap InGaAs channel at high drain bias resulted in degradation of device performances including kink, low on-state breakdown voltage (BVdson) and low maximum oscillation frequency (fmax) . In General, it is necessary that larger side recess length at the gate edge of drain side can enable to reduce the peak field intensity, therefore impact ionization in the InGaAs channel can be effectively suppressed [2], But this also increases the source resistance (Rs), which degrades the device characteristics [3].",
author = "Kim, {Dae Hyun} and Yeon, {Seong Jin} and Lee, {Jae Hak} and Seo, {Kwang Seo}",
year = "2003",
doi = "10.1109/ISDRS.2003.1272052",
language = "English",
series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "184--185",
booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",
address = "United States",
note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",
}