@inproceedings{b01b0a4f69e54d2289745e967455e5f5,
title = "Atomic arrangement and formation mechanism of c-axis oriented ZnO thin films grown on p-Si substrates",
abstract = "The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the [0002] crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.",
keywords = "Atomic arrangement, Formation mechanism, Si substrate, Structural property, ZnO film",
author = "Park, {N. K.} and Lee, {H. S.} and No, {Y. S.} and Kim, {T. W.} and Lee, {J. Y.} and Choi, {W. K.}",
year = "2007",
doi = "10.4028/3-908451-31-0.93",
language = "English",
isbn = "3908451310",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd.",
number = "PART 1",
pages = "93--96",
booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",
address = "Switzerland",
edition = "PART 1",
note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",
}