@inproceedings{82a405b921ac452fbce1cd140784dbd0,
title = "Atomically Thin 0.65nm and 6nm Vertical Side-Wall MoS2Channel Transistors",
abstract = "Si transistors will face scaling limits below 5 nm due to aggressive short channel effects (SCEs). Two-dimensional (2D) MoS2 semiconductor materials have become attractive for next-generation electronic devices. This study investigated the electrical characteristics of sidewall transistors with a Mos2 channel thickness of 0.65 nm and 6 nm, which is the optimal platform for evaluating SCEs. Furthermore, the conduction mechanism of Mos2 transistor is scrutinized by temperature dependent feature. These results will be a foundation stone for the development of ultra-scaled Mos2transistor.",
author = "Kihan Kim and Jang, {Byung Chul}",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",
year = "2023",
doi = "10.23919/SNW57900.2023.10183961",
language = "English",
series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "83--84",
booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
address = "United States",
}