Abstract
This article describes a fabrication procedure of high performance flexible ferroelectric materials supported on plastic substrates and the characterization of BaTiO3 thin films on flexible substrates. Ferroelectric BaTiO3 thin film was deposited using radio-frequency magnetron sputtering on a Pt/Ti/ SiO2 / (100) Si substrate and annealed at 700°C for crystallization. The metal-insulator (BaTiO 3) -metal structure was successfully transferred onto flexible substrates by the standard microfabrication and soft lithographic printing methods after removing the underlying sacrificial TiO2 layer by buffered oxide etchant etching. The dielectric constant of the BaTiO3 thin films on the flexible substrate was comparable with that on a bulk Si substrate. No significant change in dielectric constant was observed upon bending with various radii and debending.
| Original language | English |
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| Pages (from-to) | G57-G59 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 13 |
| Issue number | 7 |
| DOIs | |
| State | Published - 2010 |