BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector

Daeseok Lee; Jaesung Park; Sangsu Park; Jiyong Woo; Kibong Moon; Euijun Cha; Sangheon Lee; Jeonghwan Song; Yunmo Koo; Hyunsang Hwang

doi:10.1109/IEDM.2013.6724604

BEOL compatible (300°C) TiN/TiO_x/Ta/TiN 3D nanoscale (∼10nm) IMT selector

Daeseok Lee, Jaesung Park, Sangsu Park, Jiyong Woo, Kibong Moon, Euijun Cha, Sangheon Lee, Jeonghwan Song, Yunmo Koo, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

TiO_x based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO₂ layer. Using Ti₄O₇ target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti₃O₅ layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.

Original language	English
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	10.7.1-10.7.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724604
State	Published - 2013
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: 9 Dec 2013 → 11 Dec 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	9/12/13 → 11/12/13

Access to Document

10.1109/IEDM.2013.6724604

Cite this

Lee, D., Park, J., Park, S., Woo, J., Moon, K., Cha, E., Lee, S., Song, J., Koo, Y., & Hwang, H. (2013). BEOL compatible (300°C) TiN/TiO_x/Ta/TiN 3D nanoscale (∼10nm) IMT selector. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 10.7.1-10.7.4). Article 6724604 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724604

@inproceedings{bdc5158abe324ab185e35b26435ea04d,

title = "BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector",

abstract = "TiOx based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO2 layer. Using Ti4O7 target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti3O5 layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.",

author = "Daeseok Lee and Jaesung Park and Sangsu Park and Jiyong Woo and Kibong Moon and Euijun Cha and Sangheon Lee and Jeonghwan Song and Yunmo Koo and Hyunsang Hwang",

year = "2013",

doi = "10.1109/IEDM.2013.6724604",

language = "English",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "10.7.1--10.7.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",

}

Lee, D, Park, J, Park, S, Woo, J, Moon, K, Cha, E, Lee, S, Song, J, Koo, Y & Hwang, H 2013, BEOL compatible (300°C) TiN/TiO_x/Ta/TiN 3D nanoscale (∼10nm) IMT selector. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724604, Technical Digest - International Electron Devices Meeting, IEDM, pp. 10.7.1-10.7.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 9/12/13. https://doi.org/10.1109/IEDM.2013.6724604

BEOL compatible (300°C) TiN/TiO_x/Ta/TiN 3D nanoscale (∼10nm) IMT selector. / Lee, Daeseok; Park, Jaesung; Park, Sangsu et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 10.7.1-10.7.4 6724604 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Daeseok

AU - Park, Jaesung

AU - Park, Sangsu

AU - Woo, Jiyong

AU - Moon, Kibong

AU - Cha, Euijun

AU - Lee, Sangheon

AU - Song, Jeonghwan

AU - Koo, Yunmo

AU - Hwang, Hyunsang

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N2 - TiOx based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO2 layer. Using Ti4O7 target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti3O5 layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.

AB - TiOx based Insulator-Metal-Transition (IMT) devices with TiN electrode were investigated for selector application. To maximize heat confinement, we adopted localized filament by breaking stoichiometric ALD TiO2 layer. Using Ti4O7 target and reduction annealing with Ta electrode, IMT layer was formed. By optimizing device structure to maximize heat confinement and oxygen stoichiometry to obtain IMT Ti3O5 layer, we could maximize IMT characteristics at low threshold power. Scaling device area significantly improves the IMT characteristics. Moreover, reliable 1S1R characteristics were also confirmed.

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BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013

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