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BEOL-compatible 4F2 Single Crystalline Semiconductor Oscillator for Low-power and Large-scale Oscillatory Neural Network Hardware

  • Joon Pyo Kim
  • , Hyun Wook Kim
  • , Jaeyong Jeong
  • , Juhyuk Park
  • , Seong Kwang Kim
  • , Jongmin Kim
  • , Jiyong Woo
  • , Sanghyeon Kim
  • Korea Advanced Institute of Science and Technology
  • Kyungpook National University
  • Korea Advanced Nano Fab Center

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Oscillatory neural network (ONN), which is a novel neuromorphic system composed of oscillatory neurons coupled via synapses, is suitable for solving complex patterns. In this work, we demonstrated the feasible ONN hardware based on an InGaAs biristor, a single-crystal semiconductor exhibiting high reliability, uniformity, and repeatability. We first evaluated the oscillation characteristics of the InGaAs biristor-based oscillator (IBO). To enhance the operational efficiency of the ONN, we proposed a sub-harmonic injection locking (SHIL) method. This technique allows for precise control of the oscillatory behavior, resulting in improved performance and energy efficiency. In addition, we systematically demonstrated the coupled capacitors acting as synapses to control the weight in coupled IBOs. Finally, we perform simulations to validate the feasibility of our proposed device. Specifically, we tested the performance of a 3×5 ONN system in a -+pattem recognition task. We expect that the advantages of the IBO in terms of its cell size (4F2), low-temperature fabrication (< 100 °C), and high reliability will contribute to future advancements in 3D stackable ONN hardware systems.

Original languageEnglish
Title of host publication2023 International Electron Devices Meeting, IEDM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350327670
DOIs
StatePublished - 2023
Event2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States
Duration: 9 Dec 202313 Dec 2023

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2023 International Electron Devices Meeting, IEDM 2023
Country/TerritoryUnited States
CitySan Francisco
Period9/12/2313/12/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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