TY - GEN
T1 - Beyond CMOS
T2 - IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
AU - Del Alamo, Jesús A.
AU - Kim, Dae Hyun
PY - 2007
Y1 - 2007
N2 - For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V s for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.
AB - For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V s for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.
UR - http://www.scopus.com/inward/record.url?scp=34748837838&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2007.381120
DO - 10.1109/ICIPRM.2007.381120
M3 - Conference contribution
AN - SCOPUS:34748837838
SN - 142440875X
SN - 9781424408757
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 51
EP - 54
BT - IPRM'07
Y2 - 14 May 2007 through 18 May 2007
ER -