Bidirectional selection device characteristics of ultra-thin (<3nm) TiO 2 layer for 3D vertically stackable ReRAM application

Jiyong Woo; Jubong Park; Jungho Shin; Godeuni Choi; Seonghyun Kim; Wootae Lee; Sangsu Park; Daeseok Lee; Euijun Cha; Hyunsang Hwang

doi:10.1109/SNW.2012.6243332

Bidirectional selection device characteristics of ultra-thin (<3nm) TiO ₂ layer for 3D vertically stackable ReRAM application

Jiyong Woo
, Jubong Park
, Jungho Shin
, Godeuni Choi
, Seonghyun Kim
, Wootae Lee
, Sangsu Park
, Daeseok Lee
, Euijun Cha
, Hyunsang Hwang

School of Electronics Engineering

Gwangju Institute of Science and Technology
Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We propose the feasibility of bidirectional selection device characteristics in ultrathin (<3nm) TiO ₂ layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as "forming" and "reset" processes in oxide, virtual electrode/sub-3nm-thick TiO ₂/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (∼10 ⁵) and showed the feasibility of high current density (>10 ⁶A/cm ²).

Original language	English
Title of host publication	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs	https://doi.org/10.1109/SNW.2012.6243332
State	Published - 2012
Event	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States Duration: 10 Jun 2012 → 11 Jun 2012

Publication series

Name	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/06/12 → 11/06/12

Access to Document

10.1109/SNW.2012.6243332

Cite this

Woo, J., Park, J., Shin, J., Choi, G., Kim, S., Lee, W., Park, S., Lee, D., Cha, E., & Hwang, H. (2012). Bidirectional selection device characteristics of ultra-thin (<3nm) TiO ₂ layer for 3D vertically stackable ReRAM application. In 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 Article 6243332 (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012). https://doi.org/10.1109/SNW.2012.6243332

@inproceedings{afea0675d8604b3aaba23d0ccc24d426,

title = "Bidirectional selection device characteristics of ultra-thin (<3nm) TiO 2 layer for 3D vertically stackable ReRAM application",

abstract = "We propose the feasibility of bidirectional selection device characteristics in ultrathin (<3nm) TiO 2 layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as {"}forming{"} and {"}reset{"} processes in oxide, virtual electrode/sub-3nm-thick TiO 2/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (∼10 5) and showed the feasibility of high current density (>10 6A/cm 2).",

author = "Jiyong Woo and Jubong Park and Jungho Shin and Godeuni Choi and Seonghyun Kim and Wootae Lee and Sangsu Park and Daeseok Lee and Euijun Cha and Hyunsang Hwang",

year = "2012",

doi = "10.1109/SNW.2012.6243332",

language = "English",

isbn = "9781467309943",

series = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

booktitle = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

note = "2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 ; Conference date: 10-06-2012 Through 11-06-2012",

}

Woo, J, Park, J, Shin, J, Choi, G, Kim, S, Lee, W, Park, S, Lee, D, Cha, E & Hwang, H 2012, Bidirectional selection device characteristics of ultra-thin (<3nm) TiO ₂ layer for 3D vertically stackable ReRAM application. in 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012., 6243332, 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, Honolulu, HI, United States, 10/06/12. https://doi.org/10.1109/SNW.2012.6243332

Bidirectional selection device characteristics of ultra-thin (<3nm) TiO ₂ layer for 3D vertically stackable ReRAM application. / Woo, Jiyong; Park, Jubong; Shin, Jungho et al.
2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012. 2012. 6243332 (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Woo, Jiyong

AU - Park, Jubong

AU - Shin, Jungho

AU - Choi, Godeuni

AU - Kim, Seonghyun

AU - Lee, Wootae

AU - Park, Sangsu

AU - Lee, Daeseok

AU - Cha, Euijun

AU - Hwang, Hyunsang

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N2 - We propose the feasibility of bidirectional selection device characteristics in ultrathin (<3nm) TiO 2 layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as "forming" and "reset" processes in oxide, virtual electrode/sub-3nm-thick TiO 2/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (∼10 5) and showed the feasibility of high current density (>10 6A/cm 2).

AB - We propose the feasibility of bidirectional selection device characteristics in ultrathin (<3nm) TiO 2 layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as "forming" and "reset" processes in oxide, virtual electrode/sub-3nm-thick TiO 2/virtual electrode structure was achieved. The measured current-voltage characteristics of fabricated device exhibited uniform bidirectional selection behavior with a high selectivity (∼10 5) and showed the feasibility of high current density (>10 6A/cm 2).

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DO - 10.1109/SNW.2012.6243332

M3 - Conference contribution

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SN - 9781467309943

T3 - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

BT - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

T2 - 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012

Y2 - 10 June 2012 through 11 June 2012

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