Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Jeonghwan Song; Amit Prakash; Daeseok Lee; Jiyong Woo; Euijun Cha; Sangheon Lee; Hyunsang Hwang

doi:10.1063/1.4931136

Bidirectional threshold switching in engineered multilayer (Cu₂O/Ag:Cu₂O/Cu₂O) stack for cross-point selector application

Jeonghwan Song
, Amit Prakash
, Daeseok Lee
, Jiyong Woo
, Euijun Cha
, Sangheon Lee
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu₂O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu₂O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer.

Original language	English
Article number	113504
Journal	Applied Physics Letters
Volume	107
Issue number	11
DOIs	https://doi.org/10.1063/1.4931136
State	Published - 14 Sep 2015

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title = "Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application",

abstract = "In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer.",

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AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Cha, Euijun

AU - Lee, Sangheon

AU - Hwang, Hyunsang

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Y1 - 2015/9/14

N2 - In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer.

AB - In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer.

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Bidirectional threshold switching in engineered multilayer (Cu₂O/Ag:Cu₂O/Cu₂O) stack for cross-point selector application

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