Body bias effect of GaN schottky barrier MOSFET with ITO source/drain

Chang Ju Lee; Tae Hyeon Kim; Dong Seok Kim; Sang Yun Sung; Byung Kwon Jung; Young Woo Heo; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/EDSSC.2010.5713729

Body bias effect of GaN schottky barrier MOSFET with ITO source/drain

Chang Ju Lee, Tae Hyeon Kim, Dong Seok Kim, Sang Yun Sung, Byung Kwon Jung, Young Woo Heo, Jung Hee Lee, Sung Ho Hahm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated GaN SB-MOSFET using the ITO source/drain and gate with very high drain current and low threshold voltage. Furthermore, we tried to check the body bias effect of the GaN SB-MOSFET after forming the ohmic contact to the substrate. We could control threshold voltage by body bias that makes the device more useful. It is applicable to many of electric circuit applications such as logic gate, memory cell transistors, and image sensors, which are potential area for digital GaN UV optoelectronics.

Original language	English
Title of host publication	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs	https://doi.org/10.1109/EDSSC.2010.5713729
State	Published - 2010
Event	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, China Duration: 15 Dec 2010 → 17 Dec 2010

Publication series

Name	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Conference

Conference	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Country/Territory	China
City	Hong Kong
Period	15/12/10 → 17/12/10

Keywords

Body bias
Gallium nitride (GaN)
Indium-tin-oxide (ITO)
MOSFET
Schottky barrier (SB)

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10.1109/EDSSC.2010.5713729

Cite this

Lee, C. J., Kim, T. H., Kim, D. S., Sung, S. Y., Jung, B. K., Heo, Y. W., Lee, J. H., & Hahm, S. H. (2010). Body bias effect of GaN schottky barrier MOSFET with ITO source/drain. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 Article 5713729 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). https://doi.org/10.1109/EDSSC.2010.5713729

@inproceedings{590ec825139b4a4da77652dfc702b5ba,

title = "Body bias effect of GaN schottky barrier MOSFET with ITO source/drain",

abstract = "We fabricated GaN SB-MOSFET using the ITO source/drain and gate with very high drain current and low threshold voltage. Furthermore, we tried to check the body bias effect of the GaN SB-MOSFET after forming the ohmic contact to the substrate. We could control threshold voltage by body bias that makes the device more useful. It is applicable to many of electric circuit applications such as logic gate, memory cell transistors, and image sensors, which are potential area for digital GaN UV optoelectronics.",

keywords = "Body bias, Gallium nitride (GaN), Indium-tin-oxide (ITO), MOSFET, Schottky barrier (SB)",

author = "Lee, {Chang Ju} and Kim, {Tae Hyeon} and Kim, {Dong Seok} and Sung, {Sang Yun} and Jung, {Byung Kwon} and Heo, {Young Woo} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

year = "2010",

doi = "10.1109/EDSSC.2010.5713729",

language = "English",

isbn = "9781424499977",

series = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

booktitle = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

note = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 ; Conference date: 15-12-2010 Through 17-12-2010",

}

Lee, CJ, Kim, TH, Kim, DS, Sung, SY, Jung, BK, Heo, YW, Lee, JH & Hahm, SH 2010, Body bias effect of GaN schottky barrier MOSFET with ITO source/drain. in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010., 5713729, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, Hong Kong, China, 15/12/10. https://doi.org/10.1109/EDSSC.2010.5713729

Body bias effect of GaN schottky barrier MOSFET with ITO source/drain. / Lee, Chang Ju; Kim, Tae Hyeon; Kim, Dong Seok et al.
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713729 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Body bias effect of GaN schottky barrier MOSFET with ITO source/drain

AU - Lee, Chang Ju

AU - Kim, Tae Hyeon

AU - Kim, Dong Seok

AU - Sung, Sang Yun

AU - Jung, Byung Kwon

AU - Heo, Young Woo

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2010

Y1 - 2010

N2 - We fabricated GaN SB-MOSFET using the ITO source/drain and gate with very high drain current and low threshold voltage. Furthermore, we tried to check the body bias effect of the GaN SB-MOSFET after forming the ohmic contact to the substrate. We could control threshold voltage by body bias that makes the device more useful. It is applicable to many of electric circuit applications such as logic gate, memory cell transistors, and image sensors, which are potential area for digital GaN UV optoelectronics.

AB - We fabricated GaN SB-MOSFET using the ITO source/drain and gate with very high drain current and low threshold voltage. Furthermore, we tried to check the body bias effect of the GaN SB-MOSFET after forming the ohmic contact to the substrate. We could control threshold voltage by body bias that makes the device more useful. It is applicable to many of electric circuit applications such as logic gate, memory cell transistors, and image sensors, which are potential area for digital GaN UV optoelectronics.

KW - Body bias

KW - Gallium nitride (GaN)

KW - Indium-tin-oxide (ITO)

KW - MOSFET

KW - Schottky barrier (SB)

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U2 - 10.1109/EDSSC.2010.5713729

DO - 10.1109/EDSSC.2010.5713729

M3 - Conference contribution

AN - SCOPUS:79952521584

SN - 9781424499977

T3 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

BT - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

T2 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Y2 - 15 December 2010 through 17 December 2010

ER -

Body bias effect of GaN schottky barrier MOSFET with ITO source/drain

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