Border trap characterizations of Al2O3/ZrO2 and Al2O3/HfO2 bilayer films based on ambient post metal annealing and constant voltage stress

Md Mamunur Rahman; Dae Hyun Kim; Tae Woo Kim

doi:10.3390/nano10030527

Border trap characterizations of Al₂O₃/ZrO₂ and Al₂O₃/HfO₂ bilayer films based on ambient post metal annealing and constant voltage stress

Md Mamunur Rahman, Dae Hyun Kim, Tae Woo Kim

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This study represents a comparison of the border trap behavior and reliability between HfO₂ and ZrO₂ films on n-In_0.53Ga_0.47As with an Al₂O₃ interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N₂:H₂ mixed FGA passivates the border trap quite well, whereas N₂-based RTA performs better on interface traps. Al₂O₃/HfO₂ showed more degradation in terms of the threshold voltage shift while Al₂O₃/ZrO₂ showed higher leakage current behavior. Moreover, Al₂O₃/ZrO₂ showed a higher permittivity, hysteresis, and breakdown field than Al₂O₃/HfO₂.

Original language	English
Article number	527
Journal	Nanomaterials
Volume	10
Issue number	3
DOIs	https://doi.org/10.3390/nano10030527
State	Published - Mar 2020

Keywords

Atomic layer deposition
Border trap
Constant voltage stress
High-k
III-V semiconductor
Interface trap
Post metal annealing

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10.3390/nano10030527

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title = "Border trap characterizations of Al2O3/ZrO2 and Al2O3/HfO2 bilayer films based on ambient post metal annealing and constant voltage stress",

abstract = "This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.",

keywords = "Atomic layer deposition, Border trap, Constant voltage stress, High-k, III-V semiconductor, Interface trap, Post metal annealing",

author = "Rahman, \{Md Mamunur\} and Kim, \{Dae Hyun\} and Kim, \{Tae Woo\}",

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doi = "10.3390/nano10030527",

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T1 - Border trap characterizations of Al2O3/ZrO2 and Al2O3/HfO2 bilayer films based on ambient post metal annealing and constant voltage stress

AU - Rahman, Md Mamunur

AU - Kim, Dae Hyun

AU - Kim, Tae Woo

PY - 2020/3

Y1 - 2020/3

N2 - This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.

AB - This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.

KW - Atomic layer deposition

KW - Border trap

KW - Constant voltage stress

KW - High-k

KW - III-V semiconductor

KW - Interface trap

KW - Post metal annealing

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U2 - 10.3390/nano10030527

DO - 10.3390/nano10030527

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VL - 10

JO - Nanomaterials

JF - Nanomaterials

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Border trap characterizations of Al₂O₃/ZrO₂ and Al₂O₃/HfO₂ bilayer films based on ambient post metal annealing and constant voltage stress

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Keywords

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