Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

E. S. Choi; W. C. Shin; T. S. Suh; S. S. Park; S. G. Yoon

doi:10.1080/10584580008215662

Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

E. S. Choi, W. C. Shin, T. S. Suh, S. S. Park, S. G. Yoon

Chungnam National University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO₃(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10^-5 Ω̇cm². The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%.

Original language	English
Pages (from-to)	297-304
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	31
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580008215662
State	Published - 2000
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 12 Mar 2000 → 15 Mar 2000

Keywords

MOCVD
Pt/Ru/poly-Si electrode structure
Specific contact resistance
Step coverage

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10.1080/10584580008215662

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title = "Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor",

abstract = "The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10-5 {\.Ω}cm2. The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%.",

keywords = "MOCVD, Pt/Ru/poly-Si electrode structure, Specific contact resistance, Step coverage",

author = "Choi, {E. S.} and Shin, {W. C.} and Suh, {T. S.} and Park, {S. S.} and Yoon, {S. G.}",

year = "2000",

doi = "10.1080/10584580008215662",

language = "English",

volume = "31",

pages = "297--304",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

}

TY - JOUR

T1 - Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

AU - Choi, E. S.

AU - Shin, W. C.

AU - Suh, T. S.

AU - Park, S. S.

AU - Yoon, S. G.

PY - 2000

Y1 - 2000

N2 - The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10-5 Ω̇cm2. The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%.

AB - The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba,Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10-5 Ω̇cm2. The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%.

KW - MOCVD

KW - Pt/Ru/poly-Si electrode structure

KW - Specific contact resistance

KW - Step coverage

UR - http://www.scopus.com/inward/record.url?scp=0034447444&partnerID=8YFLogxK

U2 - 10.1080/10584580008215662

DO - 10.1080/10584580008215662

M3 - Conference article

AN - SCOPUS:0034447444

SN - 1058-4587

VL - 31

SP - 297

EP - 304

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th International Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor

Abstract

Keywords

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